@article{WuBeckerWaagetal.1992,
  author    = {Wu, Y. S. and Becker, Charles R. and Waag, A. and Bicknell-Tassius, R. N. and Landwehr, G.},
  title     = {Thermal effects on (100) CdZnTe substrates as studied by x-ray photoelectron spectroscopy and reflection high energy electron diffraction},
  issn      = {0003-6951},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37801},
  year      = {1992},
  abstract  = {The influence of different CdZnTe substrate treatments prior to II-VI molecular beam epitaxial growth on surface stoichiometry, oxygen, and carbon contamination has been studied using x-ray photoelectron spectroscopy and reflection high energy electron diffraction. Heating the substrate at 300 °C can eliminate oxygen contamination, but cannot completely remove carbon from the surface. Heating at higher temperatures decreases the carbon contamination only slightly, while increasing the Zn-Cd ratio on the surface considerably. The magnitude of the latter effect is surprising and is crucial when one is using lattice matched CdZnTe (Zn 4\%) substrates.},
  language  = {en}
}
@article{KrausRegnetBeckeretal.1992,
  author    = {Kraus, M. M. and Regnet, M. M. and Becker, Charles R. and Bicknell-Tassius, R. N. and Landwehr, G.},
  title     = {Comparison of band structure calculations and photoluminescence experiments on HgTe/CdTe superlattices grown by molecular beam epitaxy},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37878},
  year      = {1992},
  abstract  = {We have grown HgTe/CdTe superlattices by molecular beam epitaxy; barrier thicknesses were in the range from 15 to 91 {\AA} and the well thickness was maintained at a constant value of 30 {\AA}. The infrared photoluminescence was investigated by means of Fourier transform infrared spectroscopy in the temperature range from 4.2 to 300 K. All superlattices showed pronounced photoluminescence at temperatures up to 300 K. To gain more detailed insight into the band structure of the HgTe/CdTe superlattices, band structure calculations were performed. The concept of the envelope function approximation was followed. Employing the transfer matrix method, the calculations were completed taking into account an eight band k·p model. An important parameter in these calculations is the natural valence band offset (VBO) between the well and barrier materials. As a general trend, the value for the direct gap decreases with increasing VBO. The experimentally determined energies of the band gap are in reasonable agreement with the values obtained by the theoretical calculations. A comparison between theory and experiment shows that the observed transition energies are closer to calculations employing a large offset (350 meV) as opposed to a small VBO (40 meV).},
  language  = {en}
}
@inproceedings{BicknellTassiusSchollBeckeretal.1992,
  author    = {Bicknell-Tassius, R. N. and Scholl, S. and Becker, Charles R. and Landwehr, G.},
  title     = {High magnetic field transport in II-VI heterostructures},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-37797},
  year      = {1992},
  abstract  = {In the present work we report the results of magneto-transport measurements on some Hg-based li-VI semiconductor epitaxiallayers grown by molecular beam epitaxy. The transport measurement were carried out at temperatures in the range 0.4 - 4.2 K in magnetic fields up to 10.0 T. Further, we point out the necessity of using multicarrier models for data interpretation and show finally some Shubnikov-de-Haas results on sampies with high mobility carners.},
  language  = {en}
}