@article{ThierschmannArnoldMittermuelleretal.2015, author = {Thierschmann, H and Arnold, F and Mitterm{\"u}ller, M and Maier, L and Heyn, C and Hansen, W and Buhmann, H and Molenkamp, L W}, title = {Thermal gating of charge currents with Coulomb coupled quantum dots}, series = {New Journal of Physics}, volume = {17}, journal = {New Journal of Physics}, number = {113003}, doi = {10.1088/1367-2630/17/11/113003}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-145196}, year = {2015}, abstract = {We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), while the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons.}, language = {en} } @article{ThierschmannHenkeKnorretal.2013, author = {Thierschmann, H. and Henke, M. and Knorr, J. and Maier, L. and Heyn, C. and Hansen, W. and Buhmann, H. and Molenkamp, L. W.}, title = {Diffusion thermopower of a serial double quantum dot}, series = {New Journal of Physics}, volume = {15}, journal = {New Journal of Physics}, number = {123010}, doi = {10.1088/1367-2630/15/12/123010}, url = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-129714}, year = {2013}, abstract = {We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference 1T = (20±10)mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport.}, language = {en} }