@phdthesis{Bieker2015,
  author    = {Bieker, Steffen},
  title     = {Time and Spatially Resolved Photoluminescence Spectroscopy of Hot Excitons in Gallium Arsenide},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-134419},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2015},
  abstract  = {The present thesis investigates the impact of hot exciton effects on the low-temperature time and spatially resolved photoluminescence (PL) response of free excitons in high-purity gallium arsenide (GaAs). The work at hand extends available studies of hot carrier effects, which in bulk GaAs have up to now focused on hot electron populations. In crucial distinction from previous work, we extensively study the free exciton second LO-phonon replica. The benefit of this approach is twofold. First, the two LO phonon-assisted radiative recombination allows to circumvent the inherent interpretation ambiguities of the previously investigated free exciton zero-phonon line. Second, the recombination line shape of the second LO-phonon replica provides direct experimental access to the exciton temperature, thereby enabling the quantitative assessment of hot exciton effects. In the first part of the thesis, we address the influence of transient cooling on the time evolution of an initially hot photocarrier ensemble. To this end, we investigate time-resolved photoluminescence (TRPL) signals detected on the free exciton second LO-phonon replica. Settling a long-standing question, we show by comparison with TRPL transients of the free exciton zero-phonon line that the slow free exciton photoluminescence rise following pulsed optical excitation is dominated by the slow buildup of a free exciton population and not by the relaxation of large K-vector excitons to the Brillouin zone center. To establish a quantitative picture of the delayed photoluminescence onset, we determine the cooling dynamics of the initially hot photocarrier cloud from a time-resolved line shape analysis of the second LO-phonon replica. We demonstrate that the Saha equation, which fundamentally describes the thermodynamic population balance between free excitons and the uncorrelated electron-hole plasma, directly translates the experimentally derived cooling curves into the time-dependent conversion of unbound electron-hole pairs into free excitons. In the second part of the thesis, we establish the impact of hot exciton effects on low-temperature spatially resolved photoluminescence (SRPL) studies. Such experiments are widely used to investigate charge carrier and free exciton diffusion in semiconductors and semiconductor nanostructures. By SRPL spectroscopy of the second LO-phonon replica, we show that above-band gap focused laser excitation inevitably causes local heating in the carrier system, which crucially affects the diffusive expansion of a locally excited exciton packet. Undistorted free exciton diffusion profiles, which are correctly described by the commonly used formulation of the photocarrier diffusion equation, are only observed in the absence of spatial temperature gradients. At low sample temperatures, the reliable determination of free exciton diffusion coefficients from both continuous-wave and time-resolved SRPL spectroscopy requires strictly resonant optical excitation. Using resonant laser excitation, we observe the dimensional crossover of free exciton diffusion in etched wire structures of a thin, effectively two-dimensional GaAs epilayer. When the lateral wire width falls below the diffusion length, the sample geometry becomes effectively one-dimensional. The exciton diffusion profile along the wire stripe is then consistently reproduced by the steady-state solution to the one-dimensional diffusion equation. Finally, we demonstrate the formation of macroscopic free and bound exciton photoluminescence rings in bulk GaAs around a focused laser excitation spot. Both ring formation effects are due to pump-induced local heating in the exciton system. For a quantitative assessment of the mechanism underlying the free exciton ring formation, we directly determine the exciton temperature gradient from a spatially resolved line shape analysis of the free exciton second LO-phonon replica. We demonstrate that a pump-induced hot spot locally modifies the thermodynamic population balance between free excitons and unbound electron-hole pairs described by the Saha equation, which naturally explains the emergence of macroscopic free exciton ring structures. In summary, we demonstrate that quantitative consideration of hot exciton effects provides a coherent picture both of the time-domain free exciton luminescence kinetics and of the distinct spatially resolved photoluminescence patterns developing under the influence of spatial photocarrier diffusion.},
  subject      = {Exziton},
  language  = {en}
}
@phdthesis{Gorenflot2014,
  author    = {Gorenflot, Julien Fran{\c{c}}ois},
  title     = {Optical study of the excited states in the semiconducting polymer poly(3-hexylthiophene) for photovoltaic applications},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-116730},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2014},
  abstract  = {In the course of this dissertation, we have presented the interest of using spectroscopic methods to unravel the physics of polymer semiconductors in photovoltaic applications. Applying photoluminescence and photoinduced absorption spectroscopy to the reference system P3HT:PCBM has enabled us to study the major steps of photocurrent generation in organic bulk heterojunctions, from excitons generation to charges extraction and loss mechanisms and thus to improve the understanding of those mechanisms. The exciton binding energy, is the first obstacle to overcome for photocurrent generation in organic solar cell and the reason for the use of two materials, whose heterojunction act as a driving force for charge separation. We developed an original photoluminescence-detected field-induced exciton quenching method to investigate this energy. Absorption and photoluminescence spectra of pure P3HT show that, while both amorphous and crystalline domains participate in absorption, the energy is then transferred to the crystalline domains, from where the photoluminescence is exclusively originating. The field dependence of this photoluminescence showed that an energy of no less than 420 meV is necessary to split excitons into non photon-emitting species. Comparing those results with energy levels obtained by absorption and photoelectron spectroscopies, confirmed that the formation of those species is only a first step toward dissociation into free charges. Indeed, photoemission spectroscopy and the onset of photocurrent upon increasing the photon energy in a pure P3HT solar cell, concomitantly show that the energy level of a pair of free polarons is located 0.7 eV above the one of the exciton. The comprehensive analysis of those results originating from those different method enable us to draw a global picture of the states and energies involved in free polarons generation in pure material. This work has been widely acknowledged by the scientific community, published in Physical Review B in 2010 [1] and presented in national [2] and international [3] conferences. The spectroscopy of excited states is used to detect the presence of wanted species (charges) and potentially unwanted neutral species upon photoexcitation. As such, it offers us the possibility to qualify the efficiency of charge generation and, if any, identify the competing processes and the generation of unwanted species. In the frame of the European Marie Curie Research Network SolarNType,[4] this possibility was used - in combination with morphological, charge transport and devices characterizationsn - to study a number of new donor:acceptor blends. Thanks to those techniques, we were able to not only quantify the potential of those blends, but also to provide the chemist laboratories with a precious and detailed feedback on the strengths and weakness of the molecules, regarding charge generation, transport and extraction. The detailed study of terrylene-3,4:11,12-bis(dicarboximide) as electron acceptor for solar cells application was published in the peer review journal Synthetic Metals and was chosen to illustrate the cover page of the issue [5]. Finally, in the last chapter, we have used time resolved photoinduced absorption to improve the understanding of the charge carrier loss mechanisms in P3HT:PCBM active layers. This comprehension is of prime importance because, the fact that this recombination is far weaker than expected from the Langevin theory, enable polarons to travel further without recombining and thus to build thicker and more efficient devices. A comprehensive analysis of steady-state PIA spectra of pure P3HT, indicates that probing at 980 nm at a temperature between 140 and 250 K enables to monitor specifically polaron densities in both neat P3HT and P3HT:PCBM. Applying this finding to transient absorption enabled us to monitor, for the first time, the bimolecular recombination in pure P3HT, and to discover that - in sharp contrast with the blend - this recombination was in agreement with the Langevin theory. Moreover, it enables us to pinpoint the important role played by the existence of two materials and of energetical traps in the slow recombination and high recombination orders observed in the blend. This work has been published in the Journal of Applied Physics.[6] Those new insights in the photophysics of polymer:fullerene photoactive layers could have a strong impact on the future developement of those materials. Consistent measurements of the binding energy of excitons and intermediate species, would enable to clarify the role played by excess thermal energy in interfacial states dissociation. Better understanding of blends morphology and its influence on solar cells parameters and in particular on recombination could enable to reproduce the conditions of limited recombination on material systems offering some promising performances but with only limited active layer thicknesses. However, due to the number of parameters involved, further experimentation is required, before we can reach a quantitative modeling of bimolecular recombination. [1] Deibel et al., Phys. Rev. B, 81:085202, 2010 [2] Gorenflot et al., Deutsche Physikalische Gesellschaft Fr{\"u}hjahrstagung 2010, CPP20:10, Regensburg, Germany, 2010 [3] Gorenflot et al., International Conference of Synthetic Metals, 7Ax:05, Kyoto, Japan, 2010 [4] Marie-Curie RTN "SolarNTyp" Contract No. MRTN-CT-2006-035533 [5] Gorenflot et al., Synth. Met., 161(23{24):2669-2676, 2012 [6] Gorenflot et al., J. Appl. Phys., 115(14):144502, 2014},
  subject      = {Organische Solarzelle},
  language  = {en}
}
@phdthesis{Henn2014,
  author    = {Henn, Tobias},
  title     = {Hot spin carriers in cold semiconductors : Time and spatially resolved magneto-optical Kerr effect spectroscopy of optically induced electron spin dynamics in semiconductor heterostructures},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-110265},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2014},
  abstract  = {The present thesis "Hot spin carriers in cold semiconductors" investigates hot carrier effects in low-temperature photoinduced magneto-optical Kerr effect (MOKE) microscopy of electron spins in semiconductor heterostructures. Our studies reveal that the influence of hot photocarriers in magneto-optical pump-probe experiments is twofold. First, it is commonly assumed that a measurement of the local Kerr rotation using an arbitrary probe wavelength maps the local electron spin polarization. This is the fundamental assumption that underlies the widely used two-color MOKE microscopy technique. Our continuous-wave (cw) spectroscopy experiments demonstrate that this assumption is not correct. At low lattice temperatures the nonresonant spin excitation by the focused pump laser inevitably leads to a strong heating of the electron system. This heating, in turn, locally modifies the magneto-optical coefficient which links the experimentally observed Kerr rotation to the electron spin polarization. As a consequence, the spin-induced local Kerr rotation is augmented by spin-unrelated changes in the magneto-optical coefficient. A spatially resolved measurement of the Kerr rotation then does not correctly map the electron spin polarization profile. We demonstrate different ways to overcome this limitation and to correctly measure the electron spin profile. For cw spectroscopy we show how the true local electron spin polarization can be obtained from a quantitative analysis of the full excitonic Kerr rotation spectrum. Alternatively, picosecond MOKE microscopy using a spectrally broad probe laser pulse mitigates hot-carrier effects on the magneto-optical spin detection and allows to directly observe the time-resolved expansion of optically excited electron spin packets in real-space. Second, we show that hot photocarriers strongly modify the spin diffusion process. Owing to their high kinetic energy, hot carriers greatly enhance the electron spin diffusion coefficient with respect to the intrinsic value of the undisturbed system. Therefore, for steady-state excitation the spin diffusivity is strongly enhanced close to the pump spot center where hot electrons are present. Similarly, for short delays following pulsed excitation the high initial temperature of the electrons leads to a very fast initial expansion of the spin packet which gradually slows as the electrons cool down to the lattice temperature. While few previous publications have recognized the possible influence of hot carriers on the electron spin transport properties, the present work is the first to directly observe and quantify such hot carrier contributions. We develop models which for steady-state and pulsed excitation quantitatively describe the experimentally observed electron spin diffusion. These models are capable of separating the intrinsic spin diffusivity from the hot electron contribution, and allow to obtain spin transport parameters of the undisturbed system. We perform extensive cw and time-resolved spectroscopy studies of the lattice temperature dependence of the electron spin diffusion in bulk GaAs. Using our models we obtain a consistent set of parameters for the intrinsic temperature dependence of the electron spin diffusion coefficient and spin relaxation time and the hot carrier contributions which quantitatively describes all experimental observations. Our analysis unequivocally demonstrates that we have, as we believe for the first time, arrived at a coherent understanding of photoinduced low-temperature electron spin diffusion in bulk semiconductors.},
  subject      = {Galliumarsenid},
  language  = {en}
}
@phdthesis{Goth2015,
  author    = {Goth, Florian},
  title     = {Continuous time quantum Monte Carlo Studies of Quenches and Correlated Systems with Broken Inversion Symmetry},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-118836},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2015},
  abstract  = {This thesis deals with quantum Monte Carlo simulations of correlated low dimensional electron systems. The correlation that we have in mind is always given by the Hubbard type electron electron interaction in various settings. To facilitate this task, we develop the necessary methods in the first part. We develop the continuous time interaction expansion quantum algorithm in a manner suitable for the treatment of effective and non-equilibrium problems. In the second part of this thesis we consider various applications of the algorithms. First we examine a correlated one-dimensional chain of electrons that is subject to some form of quench dynamics where we suddenly switch off the Hubbard interaction. We find the light-cone-like Lieb-Robinson bounds and forms of restricted equilibration subject to the conserved quantities. Then we consider a Hubbard chain subject to Rashba spin-orbit coupling in thermal equilibrium. This system could very well be realized on a surface with the help of metallic adatoms. We find that we can analytically connect the given model to a model without spin-orbit coupling. This link enabled us to interpret various results for the standard Hubbard model, such as the single-particle spectra, now in the context of the Hubbard model with Rashba spin-orbit interaction. And finally we have considered a magnetic impurity in a host consisting of a topological insulator. We find that the impurity still exhibits the same features as known from the single impurity Anderson model. Additionally we study the effects of the impurity in the bath and we find that in the parameter regime where the Kondo singlet is formed the edge state of the topological insulator is rerouted around the impurity.},
  subject      = {Elektronenkorrelation},
  language  = {en}
}
@phdthesis{Tutschku2021,
  author    = {Tutschku, Christian Klaus},
  title     = {Anomaly Induced Transport And Hall Viscous Effects In 2+1 Space-Time Dimensions},
  doi       = {10.25972/OPUS-23913},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-239131},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2021},
  abstract  = {The main goal of this thesis is to elucidate the sense in which recent experimental progress in condensed matter physics, namely the verification of two-dimensional Dirac-like materials and their control in ballistic- as well as hydrodynamic transport experiments enables the observation of a well-known 'high-energy' phenomenon: The parity anomaly of planar quantum electrodynamics (QED\(_{2+1}\)). In a nutshell, the low-energy physics of two-dimensional Quantum Anomalous Hall (QAH) insulators like (Hg,Mn)Te quantum wells or magnetically doped (Bi,Sb)Te thin films can be described by the combined response of two 2+1 space-time dimensional Chern insulators with a linear dispersion in momentum. Due to their Dirac-like spectra, each of those Chern insulators is directly related to the parity anomaly of planar quantum electrodynamics. However, in contrast to a pure QED\(_{2+1}\) system, the Lagrangian of each Chern insulator is described by two different mass terms: A conventional momentum-independent Dirac mass \(m\), as well as a momentum-dependent so-called Newtonian mass term \(B \vert \mathbf{k} \vert^2\). According to the parity anomaly it is not possible to well-define a parity- and U(1) gauge invariant quantum system in 2+1 space-time dimensions. More precisely, starting with a parity symmetric theory at the classical level, insisting on gauge-invariance at the quantum level necessarily induces parity-odd terms in the calculation of the quantum effective action. The role of the Dirac mass term in the calculation of the effective QED\(_{2+1}\) action has been initially studied in Phys. Rev. Lett. 51, 2077 (1983). Even in the presence of a Dirac mass, the associated fermion determinant diverges and lacks gauge invariance. This requires a proper regularization/renormalizaiton scheme and, as such, transfers the peculiarities of the parity anomaly to the massive case. In the scope of this thesis, we connect the momentum-dependent Newtonian mass term of a Chern insulator to the parity anomaly. In particular, we reveal, that in the calculation of the effective action, before renormalization, the Newtonian mass term acts similarly to a parity-breaking element of a high-energy regularization scheme. This calculation allows us to derive the finite frequency correction to the DC Hall conductivity of a QAH insulator. We derive that the leading order AC correction contains a term proportional to the Chern number. This term originates from the Newtonian mass and can be measured via electrical or via magneto-optical experiments. The Newtonian mass, in particular, significantly changes the resonance structure of the AC Hall conductivity in comparison to pure Dirac systems like graphene. In addition, we study the effective action of the aforementioned Chern insulators in external out-of-plane magnetic fields. We show that as a consequence of the parity anomaly the QAH phase in (Hg,Mn)Te quantum wells or in magnetically doped (Bi,Sb)Te thin films survives in out-of-plane magnetic fields, violates the Onsager relation, and can therefore be distinguished from a conventional quantum Hall (QH) response. As a smoking-gun of the QAH phase in increasing magnetic fields, we predict a transition from a quantized Hall plateau with \(\sigma_\mathrm{xy}= -\mathrm{e}^2/\mathrm{h}\) to a not perfectly quantized plateau which is caused by scattering processes between counter-propagating QH and QAH edge states. This transition is expected to be of significant relevance in paramagnetic QAH insulators like (Hg,Mn)Te/CdTe quantum wells, in which the exchange interaction competes against the out-of-plane magnetic field. All of the aforementioned results do not incorporate finite temperature effects. In order to shed light on such phenomena, we further analyze the finite temperature Hall response of 2+1 dimensional Chern insulators under the combined influence of a chemical potential and an out-of-plane magnetic field. As we have mentioned above, this non-dissipative transport coefficient is directly related to the parity anomaly of planar quantum electrodynamics. Within the scope of our analysis we show that the parity anomaly itself is not renormalized by finite temperature effects. However, the parity anomaly induces two terms of different physical origin in the effective Chern-Simons action of a QAH insulator, which are directly proportional to its Hall conductivity. The first term is temperature and chemical potential independent and solely encodes the intrinsic topological response. The second term specifies the non-topological thermal response of conduction- and valence band modes, respectively. We show that the relativistic mass \(m\) of a Chern insulator counteracts finite temperature effects, whereas its non-relativistic Newtonian mass \(B \vert \mathbf{k} \vert^2 \) enhances these corrections. In addition, we are extending our associated analysis to finite out-of-plane magnetic fields, and relate the thermal response of a Chern insulator therein to the spectral asymmetry, which is a measure of the parity anomaly in out-of-plane magnetic fields. In the second part of this thesis, we study the hydrodynamic properties of two-dimensional electron systems with a broken time-reversal and parity symmetry. Within this analysis we are mainly focusing on the non-dissipative transport features originating from a peculiar hydrodynamic transport coefficient: The Hall viscosity \(\eta_\mathrm{H}\). In out-of-plane magnetic fields, the Hall viscous force directly competes with the Lorentz force, as both mechanisms contribute to the overall Hall voltage. In our theoretical considerations, we present a way of uniquely distinguishing these two contributions in a two-dimensional channel geometry by calculating their functional dependencies on all external parameters. We are in particular deriving that the ratio of the Hall viscous contribution to the Lorentz force contribution is negative and that its absolute value decreases with an increasing width, slip-length and carrier density. Instead, it increases with the electron-electron mean free path in the channel geometry considered. We show that in typical materials such as GaAs the Hall viscous contribution can dominate the Lorentz signal up to a few tens of millitesla until the total Hall voltage vanishes and eventually is exceeded by the Lorentz contribution. Last but not least, we derive that the total Hall electric field has a parabolic form originating from Lorentz effects. Most remarkably, the offset of this parabola is directly characterized by the Hall viscosity. Therefore, in summary, our results pave the way to measure and to identify the Hall viscosity via both global and local measurements of the entire Hall voltage.},
  subject      = {Anomalie},
  language  = {en}
}
@phdthesis{Fuchs2014,
  author    = {Fuchs, Peter},
  title     = {Monolithische Quantenkaskadenlaser mit monomodiger und weit abstimmbarer Emission},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-109432},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2014},
  abstract  = {Ausgehend von mittels Molekularstrahlepitaxie im InGaAs/InAlAs/InP Materialsystem gewachsenen Lasermedien wurden monochromatische Quantenkaskadenlaser f{\"u}r die GasSensorik mit Emission im mittleren Infrarot entworfen, hergestellt und charakterisiert. Vorrangige Ziele waren hierbei die Entwicklung von leistungsstarken monomodigen Lasern im langwelligen Spektralbereich um 14 µm, sowie von Bauteilen mit weiter und schneller spektraler Abstimmbarkeit. F{\"u}r den Entwurf der Laserstege wurde zun{\"a}chst die zeitliche Entwicklung der Temperaturverteilung f{\"u}r verschiedene Varianten von Wellenleitern sowohl im gepulsten als auch im kontinuierlichen Betrieb simuliert. Anhand der berechneten thermischen Bauteilwiderst{\"a}nde konnten so geeignete Prozessparameter f{\"u}r die Herstellung der Laserstrukturen ermittelt werden Zur Herstellung von monochromatischen DFB-Lasern auf Basis eines MesaWellenleiters mit Seitenwandgittern wurde ein Prozess entwickelt, der sich - im Vergleichzu g{\"a}ngigen Verfahren zur Strukturierung von DFB-Gittern - durch eine stark reduzierte Anzahl an Verfahrenschritten und eine schnelle und einfache Durchf{\"u}hrbarkeit auszeichnet. F{\"u}r Laser mit 4 mm L{\"a}nge und 14 µm mittlerer Breite wurde eine Spitzenleistung {\"u}ber 200 mW bei einer externen Effizienz von 330 mW/A und einer Schwellstromdichte von 2,1 kA/cm^2 bei Raumtemperatur bestimmt. DFB-Laser um 14 µm, welche - durch die große Wellenl{\"a}nge bedingt - h{\"o}here Schwellstromdichten aufweisen, wurden dagegen auf Basis von nasschemisch ge{\"a}tzten Doppelkanal-Wellenleitern mit in die Oberseite des Steges ge{\"a}tzten Gittern und dickem Gold auf den Stegflanken hergestellt, um eine bessere laterale W{\"a}rmeabfuhr zu erreichen. Basierend auf der Analyse des Strahlprofils und des Emissionsspektrums war trotz der großen Stegbreite ausschließlich Betrieb auf der Grundmode zu beobachten. So konnte eine Spitzenleistung von 810 mW bei einer Schwellstromdichte von 4,3 kA/cm^2 bei Raumtemperatur erreicht werden. Um eine gr{\"o}ßere spektrale Abstimmbarkeit zu erreichen als dies mit DFB-Lasern m{\"o}glich ist, wurde ein Lasertyp auf Basis von zwei gekoppelten Fabry-P erot Kavit{\"a}ten entworfen, hergestellt und untersucht. Mit diesem Konzept konnte {\"u}ber eine geringe Stromvariation ein Umschalten zwischen verschiedenen Resonanzen erreicht werden, was bei konstanter Temperatur der W{\"a}rmesenke um Raumtemperatur einen Abstimmbereich von 5,2 cm^-1 erm{\"o}glichte. Unter Einbeziehung einer Variation der Temperatur der W{\"a}rmesenke konnte monomodige Emission in einem Spektralbereich von 52 cm^-1 erreicht und die Tauglichkeit der Laser f{\"u}r die Gas-Sensorik anhand einer Absorptionsmessung an Ammoniak demonstriert werden. Da die monomodige Spitzenleistung dieser Laser jedoch konzeptbedingt auf wenige mW beschr{\"a}nkt war, wurde f{\"u}r den Einsatz weit abstimmbarer Laser in der Spurengasanalytik im letzten Teil der Arbeit ein anderer Lasertyp mit flachge{\"a}tztem Bragg-Reflektor entwickelt. Durch sorgf{\"a}ltige Wahl der Gitterparameter und ein spezielles Puls-Schema wurde eine {\"u}ber 30 cm^-1 quasi-kontinuierlich abstimmbare, monomodige Emission erreicht. Die Stabilit{\"a}t und die spektrale Reinheit des Laserlichts mit einer Seitenmodunterdr{\"u}ckung von mehr als 30 dB konnte anhand von zeitaufgel{\"o}sten Messungen des Abstimmvorgangs und durch ein Absorptionsexperiment mit Ethen belegt werden. Die erzielte spektrale Aufl{\"o}sung war durch die Messelektronik begrenzt und betrug 0,0073 cm^-1. Zudem ergab sich auch die M{\"o}glichkeit einer Analyse des thermischen {\"U}bersprechens, welche einen vernachl{\"a}ssigbaren Einfluss f{\"u}r den Pulsbetrieb der Laser zeigte und eine moderate Erw{\"a}rmung benachbarter Segmente um 10\% des f{\"u}r das vors{\"a}tzlich beheizte Segment gemessenen Wertes. Des Weiteren konnte dank der M{\"o}glichkeit zur unabh{\"a}ngigen Strominjektion in verschiedene Sektionen die Temperaturabh{\"a}ngigkeit von Verst{\"a}rkung und Absorption im Resonator untersucht werden. Herausstechende Eigenschaften dieser Laser wie die Verringerung der gepulsten Chirprate im Vergleich zu DFB-Lasern um den Faktor 3 konnten anhand von systematischen Untersuchungen mit einer Vielzahl von Bauteilen analysiert und auf die zeitlicheTemperaturentwicklung bzw. die r{\"a}umliche Temperaturverteilung im Lasersteg zur{\"u}ckgef{\"u}hrt werden. Die optische Spitzenleistung von 600 mW und externe Effizienzen bis 300mW/A sollten auch den Einsatz in der Spurengasanalyse erlauben, die hohe Geschwindigkeit mit der die Emissionswellenl{\"a}nge variiert werden kann, {\"u}berdies die Untersuchung der Reaktionskinetik in der Gasphase.},
  subject      = {Quantenkaskadenlaser},
  language  = {de}
}
@phdthesis{Dengel2013,
  author    = {Dengel, Radu-Gabriel},
  title     = {Fabrication of magnetic artificial atoms},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-103162},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2013},
  abstract  = {This thesis presents the detailed development of the fabrication process and the first observations of artificial magnetic atoms from the II-VI diluted magnetic semiconductor alloy (Zn,Cd,Be,Mn)Se. In order to manufacture the vertical quantum dot device which exhibits artificial atom behavior a number of development steps are conducted. First, the II-VI heterostructure is adjusted for the linear transport regime. Second, state of the art vertical quantum dot fabrication techniques in the III-V material system are investigated regarding their portability to the II-VI heterostructure. And third, new approaches to the fabrication process are developed, taking into account the complexity of the heterostructure and its physical properties. Finally a multi-step fabrication process is presented, which is built up from electron beam and optical lithography, dry and wet etching and insulator deposition. This process allows for the processing of pillars with diameters down to 200 nm with an insulating dielectric and gate. Preliminary transport data on the fabricated vertical quantum dots are presendted confirming the magnetic nature of the resulting artificial atoms.},
  subject      = {Zwei-Sechs-Halbleiter},
  language  = {en}
}
@phdthesis{Albert2012,
  author    = {Albert, Ferdinand},
  title     = {Vertikale und laterale Emissionseigenschaften von Halbleiter-Quantenpunkt-Mikroresonatoren im Regime der schwachen und starken Licht-Materie-Wechselwirkung},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-93016},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2012},
  abstract  = {Die vorliegende Arbeit besch{\"a}ftigt sich mit der Licht-Materie-Wechselwirkung in Quantenpunkt-Mikroresonatoren und deren vertikalen und lateralen Emissionseigenschaften. Quantenpunkte sind nanoskopische Strukturen, in denen die Beweglichkeit der Ladungstr{\"a}ger unterhalb der de-Broglie-Wellenl{\"a}nge eingeschr{\"a}nkt ist, wodurch die elektronische Zustandsdichte diskrete Werte annimmt. Sie werden daher auch als k{\"u}nstliche Atome bezeichnet. Um die Emissionseigenschaften der Quantenpunkte zu modifizieren, werden sie im Rahmen dieser Arbeit als aktive Schicht in Mikros{\"a}ulenresonatoren eingebracht. Diese bestehen aus einer GaAs lambda-Kavit{\"a}t, die zwischen zwei Braggspiegeln aus alternierenden GaAs und AlAs Schichten eingefasst ist. Diese Resonatoren bieten sowohl eine vertikale Emission {\"u}ber Fabry-Perot Moden, als auch eine laterale Emission {\"u}ber Fl� ustergaleriemoden. Die Licht-Materie-Wechselwirkung zwischen den Resonatormoden und lokalisierten Ladungstr{\"a}gern in den Quantenpunkten, genannt Exzitonen, kann in zwei Regime unterteilt werden. Im Regime der starken Kopplung wird der spontane Emissionsprozess in einem Quantenpunkt reversibel und das emittierte Photon kann wieder durch den Quantenpunkt absorbiert werden. Die theoretische Beschreibung der Kopplung eines Exzitons an die Resonatormode erfolgt {\"u}ber das Jaynes-Cummings Modell und kann im Tavis-Cummings Modell auf mehrere Emitter erweitert werden. Ist die D{\"a}mpfung des Systems zu gross, so befindet man sich im Regime der schwachen Kopplung, in dem die Emissionsrate des Quantenpunkts durch den Purcell-Effekt erh{\"o}ht werden kann. In diesem Regime k{\"o}nnen Mikrolaser mit hohen Einkopplungsraten der spontanen Emission in die Resonatormode und niedrigen Schwellpumpstr{\"o}men realisiert werden. Zur Charakterisierung der Proben werden vor allem die Methoden der Mikro-Elektrolumineszenz und der Photonenkorrelationsmessungen eingesetzt.},
  subject      = {Drei-F{\"u}nf-Halbleiter},
  language  = {de}
}
@phdthesis{Kremling2013,
  author    = {Kremling, Stefan},
  title     = {Charakterisierung von InP und InGaN Quantenpunkten als Einzelphotonenquellen sowie von AlGaInAs Quantenpunkten in Zwischenband-Solarzellen},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-101712},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2013},
  abstract  = {Die vorliegende Arbeit beschreibt die Charakterisierung von Halbleiter-Quantenpunkten (QP) in unterschiedlichen Materialsystemen. Die hier dargelegten Untersuchungen wurden mit verschiedenen Methoden der optischen Spektroskopie durchgef{\"u}hrt. Zu Beginn der Arbeit werden theoretische Grundlagen von QP hinsichtlich ihrer elektronischen Struktur und statistischen Eigenschaften erl{\"a}utert. Dar{\"u}ber hinaus wird n{\"a}her auf die Physik von Solarzellen eingegangen, in dem die relevanten Gleichungen f{\"u}r die Beschreibung des Ladungstr{\"a}gertransportes hergeleitet und diskutiert werden. Darauf folgend werden die experimentelle Methoden erkl{\"a}rt, welche zur Charakterisierung der jeweiligen Proben dienten. Besonderes Augenmerk wird auf die Methode zur Messung des Zwei-Photonen-Absorptionsprozesses gelegt. Der Abschnitt der experimentell gewonnenen Ergebnisse beginnt mit Untersuchungen an einzelnen, spektral isolierten InP QP, welche mit ultralangsamen Wachstumsraten hergestellt wurden. Aufgrund der sehr geringen Fl{\"a}chendichte konnten grundlegende physikalische Eigenschaften von QP ohne zus{\"a}tzliche laterale Strukturierungen studiert werden. Mittels Messungen in Abh{\"a}ngigkeit der Anregungsleistung und Detektion in Abh{\"a}ngigkeit der Polarisation konnten die verschiedenen Lumineszenzlinien eines QP-Spektrums den jeweiligen exzitonischen Zust{\"a}nden zugeordnet werden. Zus{\"a}tzlich wurden die QP in einem externen Magnetfeld in Faraday-Konfiguration untersucht. Abschließend durchgef{\"u}hrte Autokorrelationsmessungen erlaubten die Untersuchung der zeitlichen Statistik der QP-Photonen. Es konnte die Emission einzelner Photonen nachgewiesen werden. Anschließend folgen spektroskopische Untersuchungen von InP QP, welche mittels sequentiellen Wachstums hergestellt wurden. Anhand von Messungen in Abh{\"a}ngigkeit der Anregungsleistung und best{\"a}tigt durch zeitaufgel{\"o}ste Messungen am QP-Ensemble wurde eine bimodale QP-Verteilung mit Typ-I und Typ-II Bandverlauf bestimmt. Zus{\"a}tzlich konnten an einzelnen, spektral isolierten QP verschiedene Exziton-Zust{\"a}nde identifiziert werden, bevor abschließend Autokorrelationsmessungen die Emission einzelner Photonen demonstrierten. Zur Steigerung der Auskoppeleffizienz der Photonen wurden InP QP in Mikros{\"a}ulenresonatoren, bestehend aus zwei Bragg-Spiegeln mit einer dazwischenliegenden GaInP Kavit{\"a}t, eingebettet. Anfangs wurde die Emission der Kavit{\"a}tsmode von Strukturen mit unterschiedlichen lateralen Durchmessern charakterisiert. Mittels Temperaturverstimmung konnte die Energie eines einzelnen QP-Exzitons in Resonanz mit der Resonatormode gebracht werden. Im Regime der schwachen Wechselwirkung wurde eine signifikante {\"U}berh{\"o}hung der Lumineszenzintensit{\"a}t aufgrund des Purcell-Effektes gemessen. Zus{\"a}tzlich wurde im Regime der schwachen Kopplung die Emission einzelner Photonen anhand von Korrelationsmessungen nachgewiesen. Im zweiten Schritt wurden die QP-Mikros{\"a}ulenresonatorstrukturen elektrisch angeregt. Nach einer grundlegenden Charakterisierung konnte auch hier mittels Temperaturverstimmung die Energie der Resonatormode mit der eines Exziton in Resonanz gebracht werden. Im Regime der schwachen Wechselwirkung stieg die Intensit{\"a}t der Lumineszenz aufgrund des Purcell-Effekts signifikant an. Zum Abschluss best{\"a}tigen Korrelationsmessungen den Nachweis der Emission einzelner Photonen. In Kapitel 6 werden die Eigenschaften von InGaN QP genauer analysiert. Nitrid-Verbindungshalbleiter kristallieren vorzugsweise stabil in der Wurtzit-Kristallstruktur. Polare Kristallebenen mit fehlender Spiegelsymmetrie f{\"u}hren zu starken piezoelektrischen Feldern. Dies hat eine Lumineszenz mit ausgepr{\"a}gter linearer Polarisation zur Folge hat. Diese Eigenschaft wurde mittels statistischen Untersuchungen n{\"a}her betrachtet. Zus{\"a}tzlich erlaubten Messungen in Abh{\"a}ngigkeit der Anregungsleistung die verschiedenen Exziton-Zust{\"a}nde eines QP zu identifizieren. Zudem wurde die Emission einzelner Photonen durch InGaN QP demonstriert, erstmals sogar bis zu einer Temperatur von 50 K. Im abschliessenden Kapitel wird eine m{\"o}gliche Anwendung von QP pr{\"a}sentiert, bei der Eigenschaften in Bauteilen gezielt ausgenutzt werden, um die Bandbreite der Photonenabsorption zu erh{\"o}hen. Das Konzept der Zwischenband-Solarzellen verspricht auch Photonen mit einer Energie kleiner der Bandl{\"u}cke des umgebenden Materials aufnehmen zu k{\"o}nnen und somit den spektralen Absorptionsbereich zu erweitern. F{\"u}r eine systematische Untersuchung wurden verschiedene Proben mit integrierten AlGaInAs QP hergestellt. Anhand der Strom-Spannungs-Kennlinien der jeweiligen Proben im Dunkeln und unter Beleuchtung konnten wichtige Solarzellenparameter bestimmt werden. Spektrale Messungen liefern Informationen {\"u}ber die externe Quanteneffizienz der Proben. Entscheidend f{\"u}r den experimentellen Nachweis des Funktionsprinzips der Zwischenband-Solarzellen ist die Messung der Zwei-Photonen-Absorption f{\"u}r zwei Photonen mit jeweils kleineren Energien als der Bandl{\"u}cke des umgebenden Materials.},
  subject      = {Quantenpunkt},
  language  = {de}
}
@phdthesis{Naydenova2014,
  author    = {Naydenova, Tsvetelina},
  title     = {A Study of Seebeck and Nernst effects in (Ga,Mn)As/normal semiconductor junctions},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-101981},
  school      = {Universit{\"a}t W{\"u}rzburg},
  year      = {2014},
  abstract  = {The discovery of the Giant Magneto Resistance (GMR) effect in 1988 by Albert Fert [Baib 88] and Peter Gr{\"u}nberg [Bina 89] led to a rapid development of the field of spintronics and progress in the information technology. Semiconductor based spintronics, which appeared later, offered a possibility to combine storage and processing in a single monolithic device. A direct result is reduced heat dissipation. The observation of the spin Seebeck effect by Ushida [Uchi 08] in 2008 launched an increased interest and encouraged research in the field of spin caloritronics. Spintronics is about the coupling of charge and spin transport. Spin caloritronics studies the interaction between heat and spin currents. In contrast to spintronics and its variety of applications, a particular spin-caloritronic device has not yet been demonstrated. However, many of the novel phenomena in spin caloritronics can be detected in most spintronic devices. Moreover, thermoelectric effects might have a significant influence on spintronic device operation. This will be of particular interest for this work. Additional knowledge on the principle of coupling between heat and spin currents uncovers an alternative way to control heat dissipation and promises new device functionalities. This thesis aims to further extend the knowledge on thermoelectrics in materials with strong spin-orbit coupling, in this case the prototypical ferromagnetic semiconductor (Ga,Mn)As. The study is focused on the thermoelectric / thermomagnetic effects at the interface between a normal metal and the ferromagnetic (Ga,Mn)As. In such systems, the different interfaces provide a condition for minimal phonon drag contribution to the thermal effects. This suggests that only band contributions (a diffusion transport regime) to these effects will be measured. Chapter 2 begins with an introduction on the properties of the studied material system, and basics on thermoelectrics and spin caloritronics. The characteristic anisotropies of the (Ga,Mn)As density of states (DOS) and the corresponding magnetic properties are described. The DOS and magnetic anisotropies have an impact on the transport prop- erties of the material and that results in effects like tunneling anisotropic magnetores- istance (TAMR) [Goul 04]. Some of these effects will be used later as a reference to the results from thermoelectric / thermomagnetic measurements. The Fingerprint tech- nique [Papp 07a] is also described. The method gives an opportunity to easily study the anisotropies of materials in different device geometries. Chapter 3 continues with the experimental observation of the diffusion thermopower of (Ga,Mn)As / Si-doped GaAs tunnel junction. A device geometry for measuring the diffusion thermopower is proposed. It consists of a Si - doped GaAs heating channel with a Low Temperature (LT) GaAs / (Ga,Mn)As contact (junction) in the middle of the channel. A single Ti / Au contact is fabricated on the top of the junction. For transport characterization, the device is immersed in liquid He. A heating current technique is used to create a temperature difference by local heating of the electron system on the Si:GaAs side. An AC current at low frequency is sent through the channel and it heats the electron population in it, while the junction remains at liquid He temperature (experimentally con- firmed). A temperature difference arises between the heating channel and the (Ga,Mn)As contact. As a result, a thermal (Seebeck) voltage develops across the junction, which we call tunnelling anisotropic magneto thermopower (TAMT), similar to TAMR. TAMT is detected by means of a standard lock-in technique at double the heating current frequency (at 2f ). The Seebeck voltage is found to be linear with the temperature difference. That dependence suggests a diffusion transport regime. Lattice (phonon drag) contribution to the thermovoltage, which is usually highly nonlinear with temperature, is not observed. The value of the Seebeck coefficient of the junction at 4.2 K is estimated to be 0.5 µV/K. It is about three orders of magnitude smaller than the previously reported one [Pu 06]. Subsequently, the thermal voltage is studied in external magnetic fields. It is found that the thermopower is anisotropic with the magnetization direction. The anisotropy is explained with the anisotropies of the (Ga,Mn)As contact. Further, switching events are detected in the thermopower when the magnetic field is swept from negative to positive fields. The switchings remind of a spin valve signal and is similar to the results from previous experiments on spin injection using a (Ga,Mn)As contacts in a non-local detection scheme. That shows the importance of the thermoelectric effects and their possible contribution to the spin injection measurements. A polar plot of the collected switching fields for different magnetization angles reveals a biaxial anisotropy and resembles earlier TAMR measurements of (Ga,Mn)As tunnel junction. A simple cartoon model is introduced to describe and estimate the expected thermopower of the studied junction. The model yields a Fermi level inside of the (Ga,Mn)As valence band. Moreover, the model is found to be in good agreement with the experimental results. The Nernst effect of a (Ga,Mn)As / GaAs tunnel junction is studied in Chapter 4. A modified device geometry is introduced for this purpose. Instead of a single contact on the top of the square junction, four small contacts are fabricated to detect the Nernst signal. A temperature difference is maintained by means of a heating current technique described in Chapter 3. A magnetic field is applied parallel to the device plane. A voltage drop across two opposite contacts is detected at 2f. It appears that a simple cosine function with a parameter the angle between the magnetization and the [100] crystal direction in the (Ga,Mn)As layer manages to describe this signal which is attributed to the anomalous Nernst effect (ANE) of the ferromagnetic contact. Its symmetry is different than the Seebeck effect of the junction. For the temperature range of the thermopower measurements the ANE coefficient has a linear dependence on the temperature difference (∆T). For higher ∆T, a nonlinear dependence is observed for the coefficient. The ANE coefficient is found to be several orders of magnitude smaller than any Nernst coefficient in the literature. Both the temperature difference and the size of the ANE coefficient require further studies and analysis. Switching events are present in the measured Nernst signal when the magnetic field is swept from positive to negative values. These switchings are related to the switching fields in the ferromagnetic (Ga,Mn)As. Usually, there are two states which are present in TAMR or AMR measurements - low and high resistance. Instead of that, the Nernst signal appears to have three states - high, middle and low thermomagnetic voltage. That behaviour is governed not only by the magnetization, but also by the characteristic of the Nernst geometry. Chapter 5 summarizes the main observations of this thesis and contains ideas for future work and experiments.},
  subject      = {Galliumarsenid},
  language  = {en}
}