@article{RauHeindelUnsleberetal.2014,
  author    = {Rau, Markus and Heindel, Tobias and Unsleber, Sebastian and Braun, Tristan and Fischer, Julian and Frick, Stefan and Nauerth, Sebastian and Schneider, Christian and Vest, Gwenaelle and Reitzenstein, Stephan and Kamp, Martin and Forchel, Alfred and H{\"o}fling, Sven and Weinfurter, Harald},
  title     = {Free space quantum key distribution over 500 meters using electrically driven quantum dot single-photon sources-a proof of principle experiment},
  series = {New Journal of Physics},
  volume    = {16},
  journal   = {New Journal of Physics},
  number    = {043003},
  doi       = {10.1088/1367-2630/16/4/043003},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-116760},
  year      = {2014},
  abstract  = {Highly efficient single-photon sources (SPS) can increase the secure key rate of quantum key distribution (QKD) systems compared to conventional attenuated laser systems. Here we report on a free space QKD test using an electrically driven quantum dot single-photon source (QD SPS) that does not require a separate laser setup for optical pumping and thus allows for a simple and compact SPS QKD system. We describe its implementation in our 500 m free space QKD system in downtown Munich. Emulating a BB84 protocol operating at a repetition rate of 125 MHz, we could achieve sifted key rates of 5-17 kHz with error ratios of 6-9\% and g((2))(0)-values of 0.39-0.76.},
  language  = {en}
}
@article{BraunSchneiderMaieretal.2014,
  author    = {Braun, T. and Schneider, C. and Maier, S. and Igusa, R. and Iwamoto, S. and Forchel, A. and H{\"o}fling, S. and Arakawa, Y. and Kamp, M.},
  title     = {Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots},
  series = {AIP Advances},
  volume    = {4},
  journal   = {AIP Advances},
  number    = {9},
  issn      = {2158-3226},
  doi       = {10.1063/1.4896284},
  url       = {http://nbn-resolving.de/urn:nbn:de:bvb:20-opus-115448},
  year      = {2014},
  abstract  = {In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. (C) 2014 Author(s).},
  language  = {en}
}