TY - JOUR A1 - Wyborski, Paweł A1 - Podemski, Paweł A1 - Wroński, Piotr Andrzej A1 - Jabeen, Fauzia A1 - Höfling, Sven A1 - Sęk, Grzegorz T1 - Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer JF - Materials N2 - We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences. KW - molecular beam epitaxy KW - quantum dot KW - metamorphic buffer layer KW - band structure KW - photoluminescence KW - photoreflectance Y1 - 2022 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-297037 SN - 1996-1944 VL - 15 IS - 3 ER - TY - JOUR A1 - Wyborski, Paweł A1 - Musiał, Anna A1 - Mrowiński, Paweł A1 - Podemski, Paweł A1 - Baumann, Vasilij A1 - Wroński, Piotr A1 - Jabeen, Fauzia A1 - Höfling, Sven A1 - Sęk, Grzegorz T1 - InP-substrate-based quantum dashes on a DBR as single-photon emitters at the third telecommunication window JF - Materials N2 - We investigated emission properties of photonic structures with InAs/InGaAlAs/InP quantum dashes grown by molecular beam epitaxy on a distributed Bragg reflector. In high-spatial-resolution photoluminescence experiment, well-resolved sharp spectral lines are observed and single-photon emission is detected in the third telecommunication window characterized by very low multiphoton events probabilities. The photoluminescence spectra measured on simple photonic structures in the form of cylindrical mesas reveal significant intensity enhancement by a factor of 4 when compared to a planar sample. These results are supported by simulations of the electromagnetic field distribution, which show emission extraction efficiencies even above 18% for optimized designs. When combined with relatively simple and undemanding fabrication approach, it makes this kind of structures competitive with the existing solutions in that spectral range and prospective in the context of efficient and practical single-photon sources for fiber-based quantum networks applications. KW - single-photon emitter KW - III–V quantum dot KW - telecommunication spectral range KW - photonic structure KW - extraction efficiency Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-228773 SN - 1996-1944 VL - 14 IS - 4 ER - TY - JOUR A1 - Wroński, Piotr Andrzej A1 - Wyborski, Paweł A1 - Musiał, Anna A1 - Podemski, Paweł A1 - Sęk, Grzegorz A1 - Höfling, Sven A1 - Jabeen, Fauzia T1 - Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate JF - Materials N2 - We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications. KW - single-photon source KW - quantum dots KW - telecommunication spectral range KW - metamorphic buffer layer Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-246145 SN - 1996-1944 VL - 14 IS - 18 ER - TY - JOUR A1 - Pfenning, Andreas A1 - Krüger, Sebastian A1 - Jabeen, Fauzia A1 - Worschech, Lukas A1 - Hartmann, Fabian A1 - Höfling, Sven T1 - Single-photon counting with semiconductor resonant tunneling devices JF - Nanomaterials N2 - Optical quantum information science and technologies require the capability to generate, control, and detect single or multiple quanta of light. The need to detect individual photons has motivated the development of a variety of novel and refined single-photon detectors (SPDs) with enhanced detector performance. Superconducting nanowire single-photon detectors (SNSPDs) and single-photon avalanche diodes (SPADs) are the top-performer in this field, but alternative promising and innovative devices are emerging. In this review article, we discuss the current state-of-the-art of one such alternative device capable of single-photon counting: the resonant tunneling diode (RTD) single-photon detector. Due to their peculiar photodetection mechanism and current-voltage characteristic with a region of negative differential conductance, RTD single-photon detectors provide, theoretically, several advantages over conventional SPDs, such as an inherently deadtime-free photon-number resolution at elevated temperatures, while offering low dark counts, a low timing jitter, and multiple photon detection modes. This review article brings together our previous studies and current experimental results. We focus on the current limitations of RTD-SPDs and provide detailed design and parameter variations to be potentially employed in next-generation RTD-SPD to improve the figure of merits of these alternative single-photon counting devices. The single-photon detection capability of RTDs without quantum dots is shown. KW - single-photon detectors KW - resonant tunneling diode KW - photon counting KW - III–V semiconductor devices Y1 - 2022 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-281922 SN - 2079-4991 VL - 12 IS - 14 ER -