TY - JOUR A1 - Lee, Eun-Hye A1 - Song, Jin-Dong A1 - Han, Il-Ki A1 - Chang, Soo-Kyung A1 - Langer, Fabian A1 - Höfling, Sven A1 - Forchel, Alfred A1 - Kamp, Martin A1 - Kim, Jong-Su T1 - Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling JF - Nanoscale Research Letters N2 - The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources. KW - quantum dot KW - droplet epitaxy KW - micro-photoluminescence KW - single photon KW - GaAs Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-143692 VL - 10 IS - 114 ER - TY - JOUR A1 - Lee, Chang-Min A1 - Lim, Hee-Jin A1 - Schneider, Christian A1 - Maier, Sebastian A1 - Höfling, Sven A1 - Kamp, Martin A1 - Lee, Yong-Hee T1 - Efficient single photon source based on \(\mu\)-fibre-coupled tunable microcavity JF - Scientific Reports N2 - Efficient and fast on-demand single photon sources have been sought after as critical components of quantum information science. We report an efficient and tunable single photon source based on an InAs quantum dot (QD) embedded in a photonic crystal cavity coupled with a highly curved \(\mu\)-fibre. Exploiting evanescent coupling between the \(\mu\)-fibre and the cavity, a high collection efficiency of 23% and Purcell-enhanced spontaneous emissions are observed. In our scheme, the spectral position of a resonance can be tuned by as much as 1.5 nm by adjusting the contact position of the \(\mu\)-fibre, which increases the spectral coupling probability between the QD and the cavity mode. Taking advantage of the high photon count rate and the tunability, the collection efficiencies and the decay rates are systematically investigated as a function of the QD-cavity detuning. KW - tapers KW - semiconductor quantum dots KW - crystal KW - nanowire KW - generation KW - nanoactivity KW - mode KW - emission Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-145835 VL - 5 IS - 14309 ER - TY - JOUR A1 - Dyksik, Mateusz A1 - Motyka, Marcin A1 - Sęk, Grzegorz A1 - Misiewicz, Jan A1 - Dallner, Matthias A1 - Weih, Robert A1 - Kamp, Martin A1 - Höfling, Sven T1 - Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral Range JF - Nanoscale Research Letters N2 - The spatial uniformity of GaSb- and InAs substrate-based structures containing type II quantum wells was probed by means of large-scale photoluminescence (PL) mapping realized utilizing a Fourier transform infrared spectrometer. The active region was designed and grown in a form of a W-shaped structure with InAs and GaInSb layers for confinement of electrons and holes, respectively. The PL spectra were recorded over the entire 2-in. wafers, and the parameters extracted from each spectrum, such as PL peak energy position, its linewidth and integrated intensity, were collected in a form of two-dimensional spatial maps. Throughout the analysis of these maps, the wafers' homogeneity and precision of the growth procedure were investigated. A very small variation of PL peak energy over the wafer indicates InAs quantum well width fluctuation of only a fraction of a monolayer and hence extraordinary thickness accuracy, a conclusion further supported by high uniformity of both the emission intensity and PL linewidth. KW - interband cascade lasers KW - fourier transform spectroscopy KW - mid-infrared KW - type II quantum wells KW - spatially resolved photoluminescence Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-139733 VL - 10 IS - 402 ER - TY - JOUR A1 - Yu, Leo A1 - Natarajan, Chandra M. A1 - Horikiri, Tomoyuki A1 - Langrock, Carsten A1 - Pelc, Jason S. A1 - Tanner, Michael G. A1 - Abe, Eisuke A1 - Maier, Sebastian A1 - Schneider, Christian A1 - Höfling, Sven A1 - Kamp, Martin A1 - Hadfield, Robert H. A1 - Fejer, Martin M. A1 - Yamamoto, Yoshihisa T1 - Two-photon interference at telecom wavelengths for time-bin-encoded single photons from quantum-dot spin qubits JF - Nature Communications N2 - Practical quantum communication between remote quantum memories rely on single photons at telecom wavelengths. Although spin-photon entanglement has been demonstrated in atomic and solid-state qubit systems, the produced single photons at short wavelengths and with polarization encoding are not suitable for long-distance communication, because they suffer from high propagation loss and depolarization in optical fibres. Establishing entanglement between remote quantum nodes would further require the photons generated from separate nodes to be indistinguishable. Here, we report the observation of correlations between a quantum-dot spin and a telecom single photon across a 2-km fibre channel based on time-bin encoding and background-free frequency downconversion. The downconverted photon at telecom wavelengths exhibits two-photon interference with another photon from an independent source, achieving a mean wavepacket overlap of greater than 0.89 despite their original wavelength mismatch (900 and 911 nm). The quantum-networking operations that we demonstrate will enable practical communication between solid-state spin qubits across long distances. KW - atom KW - 1550 nm KW - up-conversion KW - heralded entanglement KW - emission KW - interface KW - generation KW - communication KW - downconversion Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-138677 VL - 6 ER - TY - JOUR A1 - Motyka, Marcin A1 - Sęk, Grzegorz A1 - Ryczko, Krzysztof A1 - Dyksik, Mateusz A1 - Weih, Robert A1 - Patriarche, Gilles A1 - Misiewicz, Jan A1 - Kamp, Martin A1 - Höfling, Sven T1 - Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers JF - Nanoscale Research Letters N2 - The effect of interface intermixing in W-design GaSb/AlSb/InAs/Ga\(_{0.665}\)In\(_{0.335}\)As\(_x\)Sb\(_{1-x}\)/InAs/AlSb/GaSb quantum wells (QWs) has been investigated by means of optical spectroscopy supported by structural data and by band structure calculations. The fundamental optical transition has been detected at room temperature through photoluminescence and photoreflectance measurements and appeared to be blueshifted with increasing As content of the GaInAsSb layer, in contrast to the energy-gap-driven shifts calculated for an ideally rectangular QW profile. The arsenic incorporation into the hole-confining layer affects the material and optical structure also altering the InAs/GaInAsSb interfaces and their degree of intermixing. Based on the analysis of cross-sectional transmission electron microscopy images and energy-dispersive X-ray spectroscopy, we could deduce the composition distribution across the QW layers and hence simulate more realistic confinement potential profiles. For such smoothed interfaces that indicate As-enhanced intermixing, the energy level calculations have been able to reproduce the experimentally obtained trend. KW - FTIR spectroscopy KW - type II GaIn(As)Sb/GaSb KW - QW interface profile KW - intermixing KW - interband cascade lasers KW - EDX spectra Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-136386 VL - 10 IS - 471 ER - TY - JOUR A1 - Winkler, Karol A1 - Fischer, Julian A1 - Schade, Anne A1 - Amthor, Matthias A1 - Dall, Robert A1 - Geßler, Jonas A1 - Emmerling, Monika A1 - Ostrovskaya, Elena A. A1 - Kamp, Martin A1 - Schneider, Christian A1 - Höfling, Sven T1 - A polariton condensate in a photonic crystal potential landscape JF - New Journal of Physics N2 - The possibility of investigating macroscopic coherent quantum states in polariton condensates and of engineering polariton landscapes in semiconductors has triggered interest in using polaritonic systems to simulate complex many-body phenomena. However, advanced experiments require superior trapping techniques that allow for the engineering of periodic and arbitrary potentials with strong on-site localization, clean condensate formation, and nearest-neighbor coupling. Here we establish a technology that meets these demands and enables strong, potentially tunable trapping without affecting the favorable polariton characteristics. The traps are based on a locally elongated microcavity which can be formed by standard lithography. We observe polariton condensation with non-resonant pumping in single traps and photonic crystal square lattice arrays. In the latter structures, we observe pronounced energy bands, complete band gaps, and spontaneous condensation at the M-point of the Brillouin zone. Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-125050 VL - 17 ER -