TY - JOUR A1 - Halder, Sebastian A1 - Hammer, Eva Maria A1 - Kleih, Sonja Claudia A1 - Bogdan, Martin A1 - Rosenstiel, Wolfgang A1 - Birbaumer, Niels A1 - Kübler, Andrea T1 - Prediction of Auditory and Visual P300 Brain-Computer Interface Aptitude JF - PLoS ONE N2 - Objective Brain-computer interfaces (BCIs) provide a non-muscular communication channel for patients with late-stage motoneuron disease (e.g., amyotrophic lateral sclerosis (ALS)) or otherwise motor impaired people and are also used for motor rehabilitation in chronic stroke. Differences in the ability to use a BCI vary from person to person and from session to session. A reliable predictor of aptitude would allow for the selection of suitable BCI paradigms. For this reason, we investigated whether P300 BCI aptitude could be predicted from a short experiment with a standard auditory oddball. Methods Forty healthy participants performed an electroencephalography (EEG) based visual and auditory P300-BCI spelling task in a single session. In addition, prior to each session an auditory oddball was presented. Features extracted from the auditory oddball were analyzed with respect to predictive power for BCI aptitude. Results Correlation between auditory oddball response and P300 BCI accuracy revealed a strong relationship between accuracy and N2 amplitude and the amplitude of a late ERP component between 400 and 600 ms. Interestingly, the P3 amplitude of the auditory oddball response was not correlated with accuracy. Conclusions Event-related potentials recorded during a standard auditory oddball session moderately predict aptitude in an audiory and highly in a visual P300 BCI. The predictor will allow for faster paradigm selection. Significance Our method will reduce strain on patients because unsuccessful training may be avoided, provided the results can be generalized to the patient population. KW - experimental design KW - acoustic signals KW - amyotrophic lateral sclerosis KW - man-computer interface KW - electroencephalography KW - event-related potentials KW - physical properties KW - vision Y1 - 2013 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-130327 VL - 8 IS - 2 ER - TY - JOUR A1 - Halder, Sebastian A1 - Hammer, Eva Maria A1 - Kleih, Sonja Claudia A1 - Bogdan, Martin A1 - Rosenstiel, Wolfgang A1 - Birbaumer, Nils A1 - Kübler, Andrea T1 - Prediction of Auditory and Visual P300 Brain-Computer Interface Aptitude N2 - Objective: Brain-computer interfaces (BCIs) provide a non-muscular communication channel for patients with late-stage motoneuron disease (e.g., amyotrophic lateral sclerosis (ALS)) or otherwise motor impaired people and are also used for motor rehabilitation in chronic stroke. Differences in the ability to use a BCI vary from person to person and from session to session. A reliable predictor of aptitude would allow for the selection of suitable BCI paradigms. For this reason, we investigated whether P300 BCI aptitude could be predicted from a short experiment with a standard auditory oddball. Methods: Forty healthy participants performed an electroencephalography (EEG) based visual and auditory P300-BCI spelling task in a single session. In addition, prior to each session an auditory oddball was presented. Features extracted from the auditory oddball were analyzed with respect to predictive power for BCI aptitude. Results: Correlation between auditory oddball response and P300 BCI accuracy revealed a strong relationship between accuracy and N2 amplitude and the amplitude of a late ERP component between 400 and 600 ms. Interestingly, the P3 amplitude of the auditory oddball response was not correlated with accuracy. Conclusions: Event-related potentials recorded during a standard auditory oddball session moderately predict aptitude in an audiory and highly in a visual P300 BCI. The predictor will allow for faster paradigm selection. Significance: Our method will reduce strain on patients because unsuccessful training may be avoided, provided the results can be generalized to the patient population. KW - Psychologie Y1 - 2013 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-77992 ER - TY - THES A1 - Hammer, Maria T1 - Charge transport in disordered organic and nanocrystalline inorganic semiconductors - Effect of charge carrier density variation T1 - Ladungstransport in ungeordneten organischen und nanokristallinen anorganischen Halbleitern - Auswirkung der Ladungsträgerdichtevariation N2 - The charge transport properties of disordered organic and nanocrystalline inorganic semiconductors as well as their combinations have been investigated in regard to the charge carrier density employing field-effect-transistor structures. The results were discussed in the framework of different theoretical models. In organic semiconductors the presence of positional and energetic disorder determines the transport of charges through the respective thin films and interfaces. The electronic disorder is characterized by statistically distributed and localized transport sites which were shown to form a Gaussian density of states. In this electronic environment the charge transport occurs via thermally activated hopping between the localized states and therefore depends on the temperature and the local electric field. Particularly, a dependence of the carrier mobility on the charge carrier concentration is observed due to filling of tail states. Inorganic nanocrystalline semiconductors, however, are expected to present a different electronic structure: Within the volume of a nanocrystallite the semiconductor is assumed to reflect the electronic properties of the crystalline bulk material. However, the outer shell is characterized by a relatively large density of surface states and correspondingly bending of the energy bands, which creates an energetic barrier between the adjacent particles. In a nanocrystalline thin film this characteristic can be rate-limiting for the inter-particle carrier transport as reflected by reduced charge carrier mobility. The effective barrier height can be reduced by controlled doping of the nanocrystals which results in improved majority carrier transfer rates across the barrier. However, doping results in the simultaneous increase of the defect density and consequently to enhanced limitation of the mobility due to charge carrier scattering. In the experiments, thin films of commercially available p- and n-type organic semiconductors (P3HT, and two derivatives of PCBM) were investigated in field-effect transistor structures. Further, sol-gel synthesized n-type nanocrystalline-ZnO (nc-ZnO) with varied doping concentration (agent: aluminum Al$^{3+}$) was introduced in order to establish an alternative way of customizing the charge transport properties of the neat material and in combination with the organic polymer semiconductor P3HT. N2 - Der Ladungstransport in ungeordneten organischen und nanokristallinen anorganischen Halb\-leitern sowie in deren Mischsystemen wurde im Hinblick auf die Ladungsträgerdichte in Feldeffekttransistoren untersucht. Die Ergebnisse wurden anhand verschiedener theoretischer Modelle diskutiert. In organischen Halbleitern bestimmt die räumliche und energetische Unordnung den Ladungstransport durch die jeweiligen dünnen Schichten und Grenzflächen. Dabei ist die elektronische Unordnung charakterisiert durch statistisch verteilte und lokalisierte Transportzustände, die eine Gaußsche Zustandsdichte zeigen. In dieser elektronischen Umgebung ist der Ladungstransport durch thermisch aktiviertes Hüpfen zwischen lokalisierten Zuständen gekennzeichnet und hängt demzufolge von der Temperatur und dem lokalen elektrischen Feld ab. Insbesondere wurde eine Abhängigkeit der Mobilität von der Ladungsträgerdichte beobachtet, was eine Folge des Füllens energetisch tief liegender Zustände ist. Anorganische nanokristalline Halbleiter zeigen eine andere elektronische Struktur: Im Volumen des Nanokristalls kann man vereinfacht die elektrischen Eigenschaften des jeweiligen Einkristalls annehmen. Jedoch ist die äußere Hülle durch eine relativ hohe Dichte an Oberflächenzuständen und einer damit einhergehenden Energiebandverbiegung charakterisiert. Daher ergibt sich eine Energiebarriere zwischen den angrenzenden Kristalliten. In nanokristallinen dünnen Schichten kann diese Eigenschaft den Ladungstransport limitieren, was durch eine verringerte Beweglichkeit widergespiegelt wird. Die effektive Barrierenhöhe kann durch kontrollierte Dotierung der Nanokristalle vermindert werden, was die Transferraten über die Barriere erhöht. Jedoch führt Dotierung gleichzeitig zu einer Zunahme der Defektdichte und folglich zu einer weiteren Minderung der Beweglichkeit durch Streuprozesse der Ladungsträger. In den hier gezeigten Experimenten wurden dünne Schichten bestehend aus kommerziell erhältlichen organischen p- und n-Halbleitern (P3HT und zwei Derivate von PCBM) in Feldeffekttransistorstrukturen untersucht. Des weiteren wurde Sol--Gel synthetisiertes n-leitendes nanokristallines ZnO (nc-ZnO) mit variiertem Aluminium Dotierlevel eingeführt, was einen alternativen Weg aufzeigt, die Eigenschaften des Ladungstransports sowohl im reinen Material als auch in dessen Kombination mit dem organischen Polymer P3HT einzustellen. KW - Ladungstransport KW - Halbleiterschicht KW - organische ungeordnete Halbleiter KW - anorganische geordnete Halbleiter KW - Ambipolarer Ladungstransport KW - electronic transport in nanocrystalline materials KW - organic-inorganic hybrid nanostructures KW - charge carrier transport in organic thin films Y1 - 2011 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-55188 ER -