TY - GEN A1 - Jones, Christopher A1 - Krauße, Christian T1 - Der Knochenmann N2 - Es handelt sich um eine mittelschwere Klausur auf Examensniveau. Neben Standardwissen zu gängigen Delikten wird vom Bearbeiter problembewusstes Transferdenken in ungewohnten, aber mit fundierter juristischer Arbeitstechnik gut lösbaren Problemkreisen erwartet. Der Fall wurde im Sommersemester 2009 im Rahmen des Examensklausurenkurses der Juristischen Fakultät gestellt. Der Notendurchschnitt betrug 5,68 Punkte, die Durchfallquote 21 %. KW - Straftat KW - Tötung KW - Totschlag KW - Gefährliche Körperverletzung KW - Körperverletzung KW - Schwere Körperverletzung KW - Freiheitsberaubung KW - Mord KW - Examensklausur KW - Jura KW - exam KW - murder KW - killing KW - aggravated battery KW - grievous bodily harm Y1 - 2011 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-55676 ER - TY - JOUR A1 - Gottscholl, Andreas A1 - Diez, Matthias A1 - Soltamov, Victor A1 - Kasper, Christian A1 - Krauße, Dominik A1 - Sperlich, Andreas A1 - Kianinia, Mehran A1 - Bradac, Carlo A1 - Aharonovich, Igor A1 - Dyakonov, Vladimir T1 - Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors JF - Nature Communications N2 - Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (V\(_B\)\(^−\)) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence of the V\(_B\)\(^−\). Specifically, we find that the frequency shift in optically detected magnetic resonance measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. We show that spin-rich hBN films are potentially applicable as intrinsic sensors in heterostructures made of functionalized 2D materials. KW - electronic properties and materials KW - qubits Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-261581 VL - 12 IS - 1 ER -