TY  - JOUR
A1  - Lebedev, N.
A1  - Stehno, M.
A1  - Rana, A.
A1  - Reith, P.
A1  - Gauquelin, N.
A1  - Verbeeck, J.
A1  - Hilgenkamp, H.
A1  - Brinkman, A.
A1  - Aarts, J.
T1  - Gate-tuned anomalous Hall effect driven by Rashba splitting in intermixed LaAlO3/GdTiO3/SrTiO3
JF  - Scientific Reports
N2  - The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behaviour of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is often interpreted as a signature of ferromagnetism, but it is becoming more and more clear that also paramagnets may contribute to AHE. We studied the influence of magnetic ions by measuring intermixed LaAlO3/GdTiO3/SrTiO3 at temperatures below 10 K. We find that, as function of gate voltage, the system undergoes a Lifshitz transition while at the same time an onset of AHE is observed. However, we do not observe clear signs of ferromagnetism. We argue the AHE to be due to the change in Rashba spin-orbit coupling at the Lifshitz transition and conclude that also paramagnetic moments which are easily polarizable at low temperatures and high magnetic fields lead to the presence of AHE, which needs to be taken into account when extracting carrier densities and mobilities.
KW  - materials science
KW  - surfaces, interfaces and thin films
Y1  - 2021
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-363244
VL  - 11
ER  - 
TY  - JOUR
A1  - Anisimov, A. N.
A1  - Simin, D.
A1  - Soltamov, V. A.
A1  - Lebedev, S. P.
A1  - Baranov, P. G.
A1  - Astakhov, G. V.
A1  - Dyakonov, V.
T1  - Optical thermometry based on level anticrossing in silicon carbide
JF  - Scientific Reports
N2  - We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz\(^{1/2}\) for a detection volume of approximately 10\(^{−6}\) mm\(^3\). In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.
KW  - electronic and spintronic devices
KW  - electronic properties and materials
Y1  - 2016
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-147809
VL  - 6
IS  - 33301
ER  -