TY  - JOUR
A1  - Li, Donghai
A1  - Trovatello, Chiara
A1  - Dal Conte, Stefano
A1  - Nuß, Matthias
A1  - Soavi, Giancarlo
A1  - Wang, Gang
A1  - Ferrari, Andrea C.
A1  - Cerullo, Giulio
A1  - Brixner, Tobias
T1  - Exciton–phonon coupling strength in single-layer MoSe2 at room temperature
JF  - Nature Communications
N2  - Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton–phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton–phonon coupling strength has not been measured at room temperature. Here, we use two-dimensional micro-spectroscopy to determine exciton–phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time induced by the coupling between A excitons and A′1 optical phonons. Analysis of beating maps combined with simulations provides the exciton–phonon coupling. We get a Huang–Rhys factor ~1, larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton–phonon coupling also in other heterogeneous semiconducting systems, with a spatial resolution ~260 nm, and provides design-relevant parameters for the development of optoelectronic devices.
Y1  - 2021
U6  - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:20-opus-363837
VL  - 12
ER  -