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In this work the creation of silicon vacancy spin defects in silicon carbide with predictable properties is demonstrated. Neutron and electron irradiation was used to create silicon vacancy ensembles and proton beam writing to create isolated vacancies at a desired position. The coherence properties of the created silicon vacancies as a function of the emitter density were investigated and a power-law function established. Sample annealing was implemented to increase the coherence properties of existing silicon vacancies. Further, spectral hole burning was used to implement absolute dc-magnetometry.