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We report the results of a detailed investigation on the Te-stabilized (2 x 1) and the Cdstabilized c( 2 X 2) surfaces of ( 100) CdTe substrates. The investigation demonstrates for the first time that both laser illumination and, to a greater extent, high-energy electron irradiation increase the Te desorption and reduce the Cd desorption from ( 100) CdTe surfaces. Thus it is possible by choosing the proper growth temperature and photon or electron fluxes to change the surface reconstruction from the normally Te-stabilized to a Cd-stabilized phase.
The sattering characteristics ot the n-VI semiconductors were analyzed by a method which combines the second-order finite-element method with the rigorous mode matching procedure. The method avolds the difficulty of solving the complex transcendental equation introduced in the multimode network method and calculates all the eigenvalues and eigenfunctions simultaneously which are needed for the mode matching treatment in the longitudinal direction. As a result, the whole solution procedure is significantly simplified. A comparison is given between the experimental data and the calculated results obtained with this analysis and tbe network method. Very good agreement has been achieved, the accuracy and efficiency of the present method are thus verified.