The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures.