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  • Fourier-transform spectroscopy (1)
  • GaAsSb (1)
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  • Type II quantum wells (1)
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  • Höfling, S. (3)
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  • Dyksik, M. (2)
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  • Misiewicz, J. (2)
  • Motyka, M. (2)
  • Sęk, G. (2)
  • Andrzejewski, J. (1)
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Photoluminescence quenching mechanisms in type IIInAs/GaInSb QWs on InAs substrates (2016)
Dyksik, M. ; Motyka, M. ; Kurka, M. ; Ryczo, K. ; Dallner, M. ; Höfling, S. ; Kamp, M. ; Sęk, G. ; Misiwicz, J.
Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.
Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing (2016)
Motyka, M. ; Dyksik, M. ; Ryczko, K. ; Weih, R. ; Dallner, M. ; Höfling, S. ; Kamp, M. ; Sęk, G. ; Misiewicz, J.
Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.
The issue of 0D-like ground state isolation in GaAs- and InP-based coupled quantum dots-quantum well systems (2017)
Syperek, M. ; Andrzejewski, J. ; Rudno-Rudziński, W. ; Maryński, A. ; Sȩk, G. ; Misiewicz, J. ; Reithmaier, J. P. ; Somers, A. ; Höfling, S.
The issue of quantum mechanical coupling between a semiconductor quantum dot and a quantum well is studied in two families of GaAs- and InP- based structures at cryogenic temperatures. It is shown that by tuning the quantum well parameters one can strongly disturb the 0D-character of the coupled system ground state, initially located in a dot. The out-coupling of either an electron or a hole state from the quantum dot confining potential is viewed by a significant elongation of the photoluminescence decay time constant. Band structure calculations show that in the GaAs-based coupled system at its ground state a hole remains isolated in the dot, whereas an electron gets delocalized towards the quantum well. The opposite picture is built for the ground state of a coupled system based on InP.
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