Magnetism is a phenomenon ubiquitously found in everyday life. Yet, together with superconductivity and superfluidity, it is among the few macroscopically realized quantum states. Although well-understood on a quasi-classical level, its microscopic description is still far from being solved. The interplay of strong interactions present in magnetic condensed-matter systems and the non-trivial commutator structure governing the underlying spin algebra prevents most conventional approaches in solid-state theory to be applied. On the other hand, the quantum limit of magnetic systems is fertile land for the development of exotic phases of matter called spin-liquids. In these states, quantum fluctuations inhibit the formation of magnetic long-range order down to the lowest temperatures. From a theoretical point of view, spin-liquids open up the possibility to study their exotic properties, such as fractionalized excitations and emergent gauge fields. However, despite huge theoretical and experimental efforts, no material realizing spin-liquid properties has been unambiguously identified with a three-dimensional crystal structure. The search for such a realization is hindered by the inherent difficulty even for model calculations. As most numerical techniques are not applicable due to the interaction structure and dimensionality of these systems, a methodological gap has to be filled. In this thesis, to fill this void, we employ the pseudo-fermion functional renormalization group (PFFRG), which provides a scheme to investigate ground state properties of quantum magnetic systems even in three spatial dimensions. We report the status quo of this established method and extend it by alleviating some of its inherent approximations. To this end, we develop a multi-loop formulation of PFFRG, including hitherto neglected terms in the underlying flow equations consistently, rendering the outcome equivalent to a parquet approximation. As a necessary prerequisite, we also significantly improve the numerical accuracy of our implementation of the method by switching to a formulation respecting the asymptotic behavior of the vertex functions as well as employing state-of-the-art numerical algorithms tailored towards PFFRG. The resulting codebase was made publicly accessible in the open-source code PFFRGSolver.jl. We subsequently apply the technique to both model systems and real materials. Augmented by a classical analysis of the respective models, we scan the phase diagram of the three-dimensional body-centered cubic lattice up to third-nearest neighbor coupling and the Pyrochlore lattice up to second-nearest neighbor. In both systems, we uncover in addition to the classically ordered phases, an extended parameter regime, where a quantum paramagnetic phase appears, giving rise to the possibility of a quantum spin liquid. Additionally, we also use the nearest-neighbor antiferromagnet on the Pyrochlore lattice as well as the simple cubic lattice with first- and third-nearest neighbor couplings as a testbed for multi-loop PFFRG, demonstrating, that the inclusion of higher loop orders has quantitative effects in paramagnetic regimes and that the onset of order can be signaled by a lack of loop convergence. Turning towards material realizations, we investigate the diamond lattice compound MnSc\(_2\)S\(_4\), explaining on grounds of ab initio couplings the emergence of a spiral spin liquid at low temperatures, but above the ordering transition. In the Pyrochlore compound Lu\(_2\)Mo\(_2\)O\(_5\)N\(_2\), which is known to not magnetically order down to lowest temperatures, we predict a spin liquid state displaying a characteristic gearwheel pattern in the spin structure factor.

Der Vernetzungsgrad von Klebstoffen und strahlenvernetzter Kunststoffformteile beeinflusst zahlreiche Materialeigenschaften und ist von essenzieller Bedeutung für die Funktionalität von Klebeverbindungen und die Beständigkeit medizinischer Implantate. Die zerstörungsfreie Prüfung dieser Qualitätsgröße ist von großem industriellem Interesse, aber noch nicht Stand der Technik. Die unilaterale Kernspinresonanz (uNMR) ist ein vielversprechendes Verfahren zur Lösung dieser Problematik. In diesem Buch wird die nicht-invasive Vernetzungsgradprüfung von strahlenvernetztem UHMWPE und verschiedenen Klebstoffen mittels uNMR demonstriert. Auf Basis der guten Korrelation mit praxisrelevanten Referenzmethoden (thermisch, rheologisch, dielektrisch) wurden Vergleichsmodelle entwickelt, welche Anwendern von Klebstoffen und vernetzten Kunststoffformteilen den Einsatz der uNMR zur zerstörungsfreien Qualitätssicherung ermöglichen.

Phase coexistence phenomena have been intensively studied in strongly correlated materials where several ordered states simultaneously occur or compete. Material properties critically depend on external parameters and boundary conditions, where tiny changes result in qualitatively different ground states. However, up to date, phase coexistence phenomena have exclusively been reported for complex compounds composed of multiple elements. Here we show that charge- and magnetically ordered states coexist in double-layer Fe/Rh(001). Scanning tunnelling microscopy and spectroscopy measurements reveal periodic charge-order stripes below a temperature of 130 K. Close to liquid helium temperature, they are superimposed by ferromagnetic domains as observed by spin-polarized scanning tunnelling microscopy. Temperature-dependent measurements reveal a pronounced cross-talk between charge and spin order at the ferromagnetic ordering temperature about 70 K, which is successfully modelled within an effective Ginzburg–Landau ansatz including sixth-order terms. Our results show that subtle balance between structural modifications can lead to competing ordering phenomena.

Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.

Since the late 20th century, spintroncis has become a very active field of research [ŽFS04]. The prospect of spin based information technology, featuring strongly decreased energy consumption and possibly quantum-computation capabilities, has fueled this interest. Standard materials, like bulk gallium arsenide (GaAs), have experienced new attention in this context by exhibiting extraordinarily long lifetimes for nonequilibrium spin information, which is an important requirement for efficient spin based information storage and transfer. Another important factor is the lengthscale over which spin information can be transported in a given material and the role of external influences. Both aspects have been studied experimentally with innovative optical methods since the late 1990s by the groups of D. D. AWSHALOM and S. A. CROOKER et al. [KA99, CS05, CFL+05]. Although the pioneering experimental approaches presented by these authors led to a variety of insights into spin propagation, some questions were raised as well. Most prominently, the classical Einstein relation, which connects the mobility and diffusivity of a given particle species, seemed to be violated for electron spins in a bulk semiconductor. In essence, nonequilibrium spins appeared to move (diffuse) faster than the electrons that actually carry the spin. However, this contradiction was masked by the fact, that the material of interest was n-type GaAs with a doping concentration directly at the transition between metallic and insulating behavior (MIT). In this regime, the electron mobility is difficult to determine experimentally. Consequently, it was not a priori obvious that the spin diffusion rates determined by the newly introduced optical methods were in contradiction with established electrical transport data. However, in an attempt to extend the available data of optical spin microscopy, another issue surfaced, concerning the mathematical drift-diffusion model that has been commonly used to evaluate lateral spin density measurements. Upon close investigation, this model appears to have a limited range of applicability, due to systematic discrepancies with the experimental data (chapter 4). These deviations are noticeable in original publications as well, and it is shown in the present work that they originate from the local heating of electrons in the process of optical spin pumping. Based on insights gained during the second half of the 20th century, it is recapitulated why conduction electrons are easily overheated at cryogenic temperatures. The main reason is the poor thermal coupling between electrons and the crystal lattice (chapter 3). Experiments in the present work showed that a significant thermal gradient exists in the conduction band under local optical excitation of electron–hole pairs. This information was used to develop a better mathematical model of spin diffusion, which allowed to derive the diffusivity of the undisturbed system, due to an effective consideration of electron overheating. In this way, spin diffusivities of n-GaAs were obtained as a function of temperature and doping density in the most interesting regime of the metal–insulator-transition. The experiments presented in this work were performed on a series of n-type bulk GaAs samples, which comprised the transition between metallic conductivity and electrical insulation at low temperatures. Local electron temperature gradients were measured by a hyperspectral photoluminescence imaging technique with subsequent evaluation of the electron–acceptor (e,A$^0$) line shape. The local density of nonequilibrium conduction electron spins was deduced from scanning magneto-optic Kerr effect microscopy. Numerical evaluations were performed using the finite elements method in combination with a least-squares fitting procedure. Chapter 1 provides an introduction to historical and recent research in the field of spintronics, as far as it is relevant for the understanding of the present work. Chapter 2 summarizes related physical concepts and experimental methods. Here, the main topics are semiconductor optics, relaxation of hot conduction electrons, and the dynamics of nonequilibrium electron spins in semiconductors. Chapter 3 discusses optical heating effects due to local laser excitation of electron–hole pairs. Experimental evaluations of the acceptor-bound-exciton triplet lines led to the conclusion that the crystal lattice is usually not overheated even at high excitation densities. Here, the heat is efficiently dissipated to the bath, due to the good thermal conductivity of the lattice. Furthermore, the heating of the lattice is inherently limited by the weak heat transfer from the electron system, which on the other hand is also the reason why conduction electrons are easily overheated at temperatures below ≈ 30 K. Spatio-spectral imaging of the electron–acceptor-luminescence line shape allowed to trace the thermal gradient within the conduction band under focused laser excitation. A heat-diffusion model was formulated, which reproduces the experimental electron-temperature trend nicely for low-doped GaAs samples of n- and p-type. For high-doped n-type GaAs samples, it could be shown that the lateral electron-temperature profile is well approximated by a Gaussian. This facilitated easy integration of hot electron influence into the mathematical model of spin diffusion. Chapter 4 deals with magneto-optical imaging of optically induced nonequilibrium conduction-electron spins in n-GaAs close to the MIT. First, the spectral dependence of the magneto-optic Kerr effect was examined in the vicinity of the fundamental band gap. Despite the marked differences among the investigated samples, the spectral shape of the Kerr rotation could be described in terms of a simple Lorentz-oscillator model in all cases. Based on this model, the linearity of the Kerr effect with respect to a nonequilibrium spin polarization is demonstrated, which is decisively important for further quantitative evaluations. Furthermore, chapter 4 presents an experimental survey of spin relaxation in n-GaAs at the MIT. Here, the dependence of the spin relaxation time on bath temperature and doping density was deduced from Hanle-MOKE measurements. While all observed trends agree with established literature, the presented results extend the current portfolio by adding a coherent set of data. Finally, diffusion of optically generated nonequilibrium conduction-electron spins was investigated by scanning MOKE microscopy. First, it is demonstrated that the standard diffusion model is inapplicable for data evaluation in certain situations. A systematic survey of the residual deviations between this model and the experimental data revealed that this situation unfortunately persisted in published works. Moreover, the temperature trend of the residual deviations suggests a close connection to the local overheating of conduction electrons. Consequently, a modified diffusion model was developed and evaluated, in order to compensate for the optical heating effect. From this model, much more reliable results were obtained, as compared to the standard diffusion model. Therefore, it was shown conclusively that the commonly reported anomalously large spin diffusivities were at least in parts caused by overheated conduction electrons. In addition to these new insights some experimental and technological enhancements were realized in the course of this work. First, the optical resolution of scanning MOKE microscopy was improved by implementing a novel scanning mechanism, which allows the application of a larger aperture objective than in the usual scheme. Secondly, imaging photoluminescence spectroscopy was employed for spatially resolved electron-temperature measurements. Here, two different implementations were developed: One for lattice-temperature measurements by acceptor–bound exciton luminescence and a second for conduction-electron temperature measurements via the analysis of the electron–acceptor luminescence line shape. It is shown in the present work that the originally stated anomalously high spin diffusivities were caused to a large extent by unwanted optical heating of the electron system. Although an efficient method was found to compensate for the influence of electron heating, it became also evident that the classical Einstein relation was nonetheless violated under the given experimental conditions. In this case however, it could be shown that this discrepancy did not originate from an experimental artifact, but was instead a manifestation of the fermionic nature of conduction electrons.