Paramagnetic shift in thermally annealed Cd\(_x\)Zn\(_{1-x}\)Se quantum dots
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- The photoluminescence of annealed Cd\(_x\)Zn\(_{1-x}\)Se quantum dots (QDs) under the influence of an external magnetic field has been studied in this paper. Post-growth annealing was performed for different annealing times. Above a critical annealing time, the QD luminescence shows a pronounced red-shift of the Zeeman split magnetic subcomponents. This observation is in contrast to the blue-shift caused by the diamagnetic behavior that is usually observed in non-magnetic QDs. We attribute our finding to the paramagnetism caused by the mixingThe photoluminescence of annealed Cd\(_x\)Zn\(_{1-x}\)Se quantum dots (QDs) under the influence of an external magnetic field has been studied in this paper. Post-growth annealing was performed for different annealing times. Above a critical annealing time, the QD luminescence shows a pronounced red-shift of the Zeeman split magnetic subcomponents. This observation is in contrast to the blue-shift caused by the diamagnetic behavior that is usually observed in non-magnetic QDs. We attribute our finding to the paramagnetism caused by the mixing of heavy and light hole states. Hence, post-growth thermal annealing treatment might be employed to render undoped epitaxial QDs intrinsically magnetic in a controlled manner. Two theoretical models were developed: a few-particle model to account for excitonic complex effects and a multiband calculation that describes the valence band hybridization. Contrasting the two models allowed us to unambiguously elucidate the nature of such an effect.…
Autor(en): | E. Margapoti, F. M. Alves, S. Mahapatra, V. Lopez-Richard, L. Worschech, K. Brunner, F. Qu, C. Destefani, E. Menendez-Proupin, C. Bougerol, A. Forchel, G. E. Marques |
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URN: | urn:nbn:de:bvb:20-opus-133294 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | New Journal of Physics |
Erscheinungsjahr: | 2012 |
Band / Jahrgang: | 14 |
Heft / Ausgabe: | 043038 |
Originalveröffentlichung / Quelle: | New Journal of Physics 14 (2012) 043038. doi:10.1088/1367-2630/14/4/043038 |
DOI: | https://doi.org/10.1088/1367-2630/14/4/043038 |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 537 Elektrizität, Elektronik |
Freie Schlagwort(e): | semiconductors |
Datum der Freischaltung: | 13.01.2017 |
Lizenz (Deutsch): | CC BY-NC-SA: Creative-Commons-Lizenz: Namensnennung, Nicht kommerziell, Weitergabe unter gleichen Bedingungen |