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Paramagnetic shift in thermally annealed Cd\(_x\)Zn\(_{1-x}\)Se quantum dots

Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-133294
  • The photoluminescence of annealed Cd\(_x\)Zn\(_{1-x}\)Se quantum dots (QDs) under the influence of an external magnetic field has been studied in this paper. Post-growth annealing was performed for different annealing times. Above a critical annealing time, the QD luminescence shows a pronounced red-shift of the Zeeman split magnetic subcomponents. This observation is in contrast to the blue-shift caused by the diamagnetic behavior that is usually observed in non-magnetic QDs. We attribute our finding to the paramagnetism caused by the mixingThe photoluminescence of annealed Cd\(_x\)Zn\(_{1-x}\)Se quantum dots (QDs) under the influence of an external magnetic field has been studied in this paper. Post-growth annealing was performed for different annealing times. Above a critical annealing time, the QD luminescence shows a pronounced red-shift of the Zeeman split magnetic subcomponents. This observation is in contrast to the blue-shift caused by the diamagnetic behavior that is usually observed in non-magnetic QDs. We attribute our finding to the paramagnetism caused by the mixing of heavy and light hole states. Hence, post-growth thermal annealing treatment might be employed to render undoped epitaxial QDs intrinsically magnetic in a controlled manner. Two theoretical models were developed: a few-particle model to account for excitonic complex effects and a multiband calculation that describes the valence band hybridization. Contrasting the two models allowed us to unambiguously elucidate the nature of such an effect.zeige mehrzeige weniger

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Metadaten
Autor(en): E. Margapoti, F. M. Alves, S. Mahapatra, V. Lopez-Richard, L. Worschech, K. Brunner, F. Qu, C. Destefani, E. Menendez-Proupin, C. Bougerol, A. Forchel, G. E. Marques
URN:urn:nbn:de:bvb:20-opus-133294
Dokumentart:Artikel / Aufsatz in einer Zeitschrift
Institute der Universität:Fakultät für Physik und Astronomie / Physikalisches Institut
Sprache der Veröffentlichung:Englisch
Titel des übergeordneten Werkes / der Zeitschrift (Englisch):New Journal of Physics
Erscheinungsjahr:2012
Band / Jahrgang:14
Heft / Ausgabe:043038
Originalveröffentlichung / Quelle:New Journal of Physics 14 (2012) 043038. doi:10.1088/1367-2630/14/4/043038
DOI:https://doi.org/10.1088/1367-2630/14/4/043038
Allgemeine fachliche Zuordnung (DDC-Klassifikation):5 Naturwissenschaften und Mathematik / 53 Physik / 537 Elektrizität, Elektronik
Freie Schlagwort(e):semiconductors
Datum der Freischaltung:13.01.2017
Lizenz (Deutsch):License LogoCC BY-NC-SA: Creative-Commons-Lizenz: Namensnennung, Nicht kommerziell, Weitergabe unter gleichen Bedingungen