Spin-texture inversion in the giant Rashba semiconductor BiTeI
Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-173769
- Semiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structure of the electronic wave functions is experimentally challenging and yet essential for exploiting spin–orbit effects for spin manipulation. Here we employ a state-of-the-art photoelectron momentum microscope with a multichannel spin filter toSemiconductors with strong spin–orbit interaction as the underlying mechanism for the generation of spin-polarized electrons are showing potential for applications in spintronic devices. Unveiling the full spin texture in momentum space for such materials and its relation to the microscopic structure of the electronic wave functions is experimentally challenging and yet essential for exploiting spin–orbit effects for spin manipulation. Here we employ a state-of-the-art photoelectron momentum microscope with a multichannel spin filter to directly image the spin texture of the layered polar semiconductor BiTeI within the full two-dimensional momentum plane. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the valence and conduction band electrons in BiTeI have spin textures of opposite chirality and of pronounced orbital dependence beyond the standard Rashba model, the latter giving rise to strong optical selection-rule effects on the photoelectron spin polarization. These observations open avenues for spin-texture manipulation by atomic-layer and charge carrier control in polar semiconductors.…
Autor(en): | Henriette Maaß, Hendrik Bentmann, Christoph Seibel, Christian Tusche, Sergey V. Eremeev, Thiago R.F. Peixoto, Oleg E. Tereshchenko, Konstantin A. Kokh, Evgueni V. Chulkov, Jürgen Kirschner, Friedrich Reinert |
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URN: | urn:nbn:de:bvb:20-opus-173769 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | Nature Communications |
Erscheinungsjahr: | 2016 |
Band / Jahrgang: | 7 |
Aufsatznummer: | 11621 |
Originalveröffentlichung / Quelle: | Nature Communications 2016, 7:11621. DOI: 10.1038/ncomms11621 |
DOI: | https://doi.org/10.1038/ncomms11621 |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 537 Elektrizität, Elektronik |
Freie Schlagwort(e): | applied physics; semiconductors; spintronics |
Datum der Freischaltung: | 16.03.2021 |
Lizenz (Deutsch): | CC BY: Creative-Commons-Lizenz: Namensnennung 4.0 International |