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Analytical ultracentrifugation (AUC) is a first principles based method to determine absolute sedimentation coefficients and buoyant molar masses of macromolecules and their complexes, reporting on their size and shape in free solution. The purpose of this multi-laboratory study was to establish the precision and accuracy of basic data dimensions in AUC and validate previously proposed calibration techniques. Three kits of AUC cell assemblies containing radial and temperature calibration tools and a bovine serum albumin (BSA) reference sample were shared among 67 laboratories, generating 129 comprehensive data sets. These allowed for an assessment of many parameters of instrument performance, including accuracy of the reported scan time after the start of centrifugation, the accuracy of the temperature calibration, and the accuracy of the radial magnification. The range of sedimentation coefficients obtained for BSA monomer in different instruments and using different optical systems was from 3.655 S to 4.949 S, with a mean and standard deviation of (4.304\(\pm\)0.188) S (4.4%). After the combined application of correction factors derived from the external calibration references for elapsed time, scan velocity, temperature, and radial magnification, the range of s-values was reduced 7-fold with a mean of 4.325 S and a 6-fold reduced standard deviation of \(\pm\)0.030 S (0.7%). In addition, the large data set provided an opportunity to determine the instrument-to-instrument variation of the absolute radial positions reported in the scan files, the precision of photometric or refractometric signal magnitudes, and the precision of the calculated apparent molar mass of BSA monomer and the fraction of BSA dimers. These results highlight the necessity and effectiveness of independent calibration of basic AUC data dimensions for reliable quantitative studies.
In this paper, we present results on the first MBE growth of HgSe. The influence of the GaAs substrate temperature as well as the Hg and Se fluxes on the growth and the electrical properties has been investigated. It has been found that the growth rate is very low at substrate temperatures above 120°C. At 120°C and at lower temperatures, the growth rate is appreciably higher. The sticking coefficient of Se seems to depend inversely on the Hg/Se flux ratio. Epitaxial growth could be maintained at 70°C with Hg/Se flux ratios between lOO and ISO, and at 160°C between 280 and 450. The electron mobilities of these HgSe epilayers at room temperature decrease from a maximum value of 8.2 x 10^3 cm2 /V' s with increasing electron concentration. The concentration was found to be between 6xlO^17 and 1.6x10^19 cm- 3 at room temperature. Rocking curves from X-ray diffraction measurements of the better epilayers have a full width at half maximum of 5S0 arc sec.
Digital anamorphosis is used to define a distorted image of health and care that may be viewed correctly using digital tools and strategies. MASK digital anamorphosis represents the process used by MASK to develop the digital transformation of health and care in rhinitis. It strengthens the ARIA change management strategy in the prevention and management of airway disease. The MASK strategy is based on validated digital tools. Using the MASK digital tool and the CARAT online enhanced clinical framework, solutions for practical steps of digital enhancement of care are proposed.
Background
The intent of this pooled analysis as part of the German society for radiation oncology (DEGRO) stereotactic body radiotherapy (SBRT) initiative was to analyze the patterns of care of SBRT for liver oligometastases and to derive factors influencing treated metastases control and overall survival in a large patient cohort.
Methods
From 17 German and Swiss centers, data on all patients treated for liver oligometastases with SBRT since its introduction in 1997 has been collected and entered into a centralized database. In addition to patient and tumor characteristics, data on immobilization, image guidance and motion management as well as dose prescription and fractionation has been gathered. Besides dose response and survival statistics, time trends of the aforementioned variables have been investigated.
Results
In total, 474 patients with 623 liver oligometastases (median 1 lesion/patient; range 1–4) have been collected from 1997 until 2015. Predominant histologies were colorectal cancer (n = 213 pts.; 300 lesions) and breast cancer (n = 57; 81 lesions). All centers employed an SBRT specific setup. Initially, stereotactic coordinates and CT simulation were used for treatment set-up (55%), but eventually were replaced by CBCT guidance (28%) or more recently robotic tracking (17%). High variance in fraction (fx) number (median 1 fx; range 1–13) and dose per fraction (median: 18.5 Gy; range 3–37.5 Gy) was observed, although median BED remained consistently high after an initial learning curve. Median follow-up time was 15 months; median overall survival after SBRT was 24 months. One- and 2-year treated metastases control rate of treated lesions was 77% and 64%; if maximum isocenter biological equivalent dose (BED) was greater than 150 Gy EQD2Gy, it increased to 83% and 70%, respectively. Besides radiation dose colorectal and breast histology and motion management methods were associated with improved treated metastases control.
Conclusion
After an initial learning curve with regards to total cumulative doses, consistently high biologically effective doses have been employed translating into high local tumor control at 1 and 2 years. The true impact of histology and motion management method on treated metastases control deserve deeper analysis. Overall survival is mainly influenced by histology and metastatic tumor burden.
Background
The aim of this analysis was to model the effect of local control (LC) on overall survival (OS) in patients treated with stereotactic body radiotherapy (SBRT) for liver or lung metastases from colorectal cancer.
Methods
The analysis is based on pooled data from two retrospective SBRT databases for pulmonary and hepatic metastases from 27 centers from Germany and Switzerland. Only patients with metastases from colorectal cancer were considered to avoid histology as a confounding factor. An illness-death model was employed to model the relationship between LC and OS.
Results
Three hundred eighty-eight patients with 500 metastatic lesions (lung n = 209, liver n = 291) were included and analyzed. Median follow-up time for local recurrence assessment was 12.1 months. Ninety-nine patients with 112 lesions experienced local failure. Seventy-one of these patients died after local failure. Median survival time was 27.9 months in all patients and 25.4 months versus 30.6 months in patients with and without local failure after SBRT. The baseline risk of death after local failure exceeds the baseline risk of death without local failure at 10 months indicating better survival with LC.
Conclusion
In CRC patients with lung or liver metastases, our findings suggest improved long-term OS by achieving metastatic disease control using SBRT in patients with a projected OS estimate of > 12 months.
The molecular beam epitaxially growth of (001) Hg\(_{1-x}\) Cd\(_z\) Te-HgTe superlattices has been systematically investigated. The well width as well as the period were determined directly by X-ray diffraction. This was accomphshed for the well width by exploiting the high reflectivity from HgTe and the low reflectivity from CdTe for the (002) Bragg reflection. Knowing the well and barrier thicknesses we have been able to set an upper limit on the aver~ge composition of the barriers, Xl, by annealing the superlattice and then measuring the composition of the. resultmg alloy. Xb was shown to decrease exponentially with decreasing barrier width. Xb is appreciably smaller m. narrow barriers due to the increased significance of interdiffusion in the Hg\(_{1-x}\)Cd\(_x\) Te/HgTe interface in narrow barriers. The experimentally determined optical absorption coefficient for these superlattices is compared WIth theoretical calculations. The absorption coefficient was determined from transmission and reflection spectra at 300, 77 and 5 K. Using the thickness and composition of the barriers and wells, and an interface width due to interdiffusion, the complex refractive index is calculated and compared with the experimental absorption coefficient. The envelope function method based on an 8 x 8 second order k . p band model was used to calculate the superlattice states. These results when inserted into Kubo's formula, yield the dynamic conductivity for interband transitions. The experimental and theoretical values for the absorption coefficient using no adjustable parameters are in good agreement for most of the investigated superlattices. Furthermore the agreement for the higher energetic interband transitions is much worse if values for the barrier composition, which are appreciably different than the experimentally determined values, are used. The infrared photoluminescence was investigated at temperatures from 4.2 to 300 K. Pronounced photoluminescence was observed for all superlattices in this temperature range.
Ischemic stroke is the second leading cause of death worldwide. Only one moderately effective therapy exists, albeit with contraindications that exclude 90% of the patients. This medical need contrasts with a high failure rate of more than 1,000 pre-clinical drug candidates for stroke therapies. Thus, there is a need for translatable mechanisms of neuroprotection and more rigid thresholds of relevance in pre-clinical stroke models. One such candidate mechanism is oxidative stress. However, antioxidant approaches have failed in clinical trials, and the significant sources of oxidative stress in stroke are unknown. We here identify NADPH oxidase type 4 (NOX4) as a major source of oxidative stress and an effective therapeutic target in acute stroke. Upon ischemia, NOX4 was induced in human and mouse brain. Mice deficient in NOX4 (Nox42/2) of either sex, but not those deficient for NOX1 or NOX2, were largely protected from oxidative stress, blood-brain-barrier leakage, and neuronal apoptosis, after both transient and permanent cerebral ischemia. This effect was independent of age, as elderly mice were equally protected. Restoration of oxidative stress reversed the stroke-protective phenotype in Nox42/2 mice. Application of the only validated low-molecular-weight pharmacological NADPH oxidase inhibitor, VAS2870, several hours after ischemia was as protective as deleting NOX4. The extent of neuroprotection was exceptional, resulting in significantly improved long-term neurological functions and reduced mortality. NOX4 therefore represents a major source of oxidative stress and novel class of drug target for stroke therapy.
Tuberous sclerosis complex (TSC), caused by dominant mutations in either TSC1 or TSC2 tumour suppressor genes is characterized by the presence of brain malformations, the cortical tubers that are thought to contribute to the generation of pharmacoresistant epilepsy. Here we report that tuberless heterozygote \(Tsc1^{+/-}\) mice show functional upregulation of cortical GluN2C-containing N-methyl-D-aspartate receptors (NMDARs) in an mTOR-dependent manner and exhibit recurrent, unprovoked seizures during early postnatal life (<P19). Seizures are generated intracortically in the granular layer of the neocortex. Slow kinetics of aberrant GluN2C-mediated currents in spiny stellate cells promotes excessive temporal integration of persistent NMDAR-mediated recurrent excitation and seizure generation. Accordingly, specific GluN2C/D antagonists block seizures in \(Tsc1^{+/-}\) mice in vivo and in vitro. Likewise, GluN2C expression is upregulated in TSC human surgical resections, and a GluN2C/D antagonist reduces paroxysmal hyperexcitability. Thus, GluN2C receptor constitutes a promising molecular target to treat epilepsy in TSC patients.
The ability to perform mathematical tasks is required in everyday life. Although heritability estimates suggest a genetic contribution, no previous study has conclusively identified a genetic risk variant for mathematical performance. Research has shown that the prevalence of mathematical disabilities is increased in children with dyslexia. We therefore correlated genome-wide data of 200 German children with spelling disability, with available quantitative data on mathematic ability. Replication of the top findings in additional dyslexia samples revealed that rs133885 was a genome-wide significant marker for mathematical abilities\((P_{comb}=7.71 x 10^{-10}, n=699)\), with an effect size of 4.87%. This association was also found in a sample from the general population (P=0.048, n=1080), albeit with a lower effect size. The identified variant encodes an amino-acid substitution in MYO18B, a protein with as yet unknown functions in the brain. As areas of the parietal cortex, in particular the intraparietal sulcus (IPS), are involved in numerical processing in humans, we investigated whether rs133885 was associated with IPS morphology using structural magnetic resonance imaging data from 79 neuropsychiatrically healthy adults. Carriers of the MYO18B risk-genotype displayed a significantly lower depth of the right IPS. This validates the identified association between rs133885 and mathematical disability at the level of a specific intermediate phenotype.
We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd\(_{l-x}\)Mg, Te by molecular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen grown by any epitaxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3.0 eV and crystallizcs usually in thc wurtzite structure. Pseudomorphic films were grown on zincblende Cd Te suhstrates for a MgTe thickness helow a critical layer thickncss of approximately 500 nm. In addition, Cd\(_{l_x}\),Mg\(_x\)Te epilayers were grown with a Mg concentration between 0 and 68%, which corresponds to a band gap betwcen 1.5 and 2.5 eV at room temperature. The crystalline quality of thc layers is comparabk to CdTc thin films as long as they are fully strained. The lauice constant of zincblende MgTe is slightly smaller than that of CdTe, and the lattice mismatch is as low as O.7%. In addition highly n-type CdMgTe layers were fabricatcd by hromine doping. The tunability of the band gap as weil as the rather good laUice match with CdTc makes the matcrial interesting for optoelectronic device applications for the entire visible range.
A semiempirical model is presented that correlates the broadening of the absorption edge with both transitions below the energy gap and with transitions by the Kane band model. This model correctly fits both the absorption and luminescence spectra of narrow-gap (Hg,Cd)Te samples that have been grown by the traveling heater method as well as by molecular-beam epitaxy. The accuracy of the band-gap determination is enhanced by this model.
The influence of different CdZnTe substrate treatments prior to II-VI molecular beam epitaxial growth on surface stoichiometry, oxygen, and carbon contamination has been studied using x-ray photoelectron spectroscopy and reflection high energy electron diffraction. Heating the substrate at 300 °C can eliminate oxygen contamination, but cannot completely remove carbon from the surface. Heating at higher temperatures decreases the carbon contamination only slightly, while increasing the Zn-Cd ratio on the surface considerably. The magnitude of the latter effect is surprising and is crucial when one is using lattice matched CdZnTe (Zn 4%) substrates.
The surface sublimation of Cd and Te atoms from the zinc blende (111)A CdTe surface has been investigated in detail by reflection high energy electron diffraction and x-ray photoelectron spectroscopy. These experiments verify that Te is much easier to evaporate than Cd. The experimental value for the Te activation energy from a Te stabilized (111)A CdTe surface is 1.41 ±0.1O eV, which is apparently inconsistent with recent theoretical results.
The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures.
The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CH\(_4\)-CH\(_2\) gases has been employed to prepare stripes with a width of about 1 μm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes.
We have grown HgTe/CdTe superlattices by molecular beam epitaxy; barrier thicknesses were in the range from 15 to 91 Å and the well thickness was maintained at a constant value of 30 Å. The infrared photoluminescence was investigated by means of Fourier transform infrared spectroscopy in the temperature range from 4.2 to 300 K. All superlattices showed pronounced photoluminescence at temperatures up to 300 K. To gain more detailed insight into the band structure of the HgTe/CdTe superlattices, band structure calculations were performed. The concept of the envelope function approximation was followed. Employing the transfer matrix method, the calculations were completed taking into account an eight band k·p model. An important parameter in these calculations is the natural valence band offset (VBO) between the well and barrier materials. As a general trend, the value for the direct gap decreases with increasing VBO. The experimentally determined energies of the band gap are in reasonable agreement with the values obtained by the theoretical calculations. A comparison between theory and experiment shows that the observed transition energies are closer to calculations employing a large offset (350 meV) as opposed to a small VBO (40 meV).
We have investigated oxygen on CdTe substrates by means of x-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). A Te oxide layer that was at least 15 A thick was found on the surface of as-delivered CdTe substrates that were mechanically polished. This oxide is not easily evaporated at temperatures lower than 350°C. Furthermore, heating in air, which further oxidizes the CdTe layer, should be avoided. Etching with HCI acid (15% HCl) for at least 20 s and then rinsing with de-ionized water reduces the Te oxide layer on the surface down to 4% of a monoatomic layer. However, according to XPS measurements of the 0 Is peak, 20%-30% of a monoatomic layer of oxygen remains on the surface, which can be eliminated by heating at temperatures ranging between 300 and 340 cC. The RHEED patterns for a molecular beam epitaxially (MBE)-grown CdTe film on a (lOO) CdTe substrate with approximately one monoatomic layer of oxidized Te on the surface lose the characteristics of the normal RHEED pattems for a MBE-grown CdTe film on an oxygen-free CdTe substrate.
Molecular beam epitaxially grown short period (001) Hg\(_{1_x}\)Cd\(_x\)Te-HgTe superlattices have been systematically investigated. Several narrow well widths were chosen, e.g., 30, 35 and 40 Å, and the barrier widths were varied between 24 and 90 Å for a particular well width. Both the well width and the total period were determined directly by means of x-ray diffraction. The well width was determined by exploiting the high reflectivity from HgTe and the low reflectivity from CdTe for the (002) Bragg reflection. Knowing the well and barrier widths we have been able to set an upper limit on the average Cd concentration of the barriers, \(\overline x_b\), by annealing several superlattices and then measuring the composition of the resulting alloy. \(\overline x_b\) was shown to decrease exponentially with decreasing barrier width. The structure of a very short period superlattice, i.e., 31.4 Å, was also investigated by transmission electron microscopy, corroborating the x-ray diffraction results.
Infrared photoconductor fabricated with HgTe/CdTe superlattice grown by molecular beam epitaxy
(1993)
An infrared photoconductor fabricated with a HgTe/CdTe superlattice grown on a GaAs substrate by molecular beam epitaxy is described here for the first time. The growth procedure, device fabrication, and measurement results are described. The results show that the device has relatively high uniformity and 1000 K black-body detectivity 2.4 X 10\(^9\) cm Hz\(^{1/2}\) W\(^{-1}\) . The photoconductivity decay method was used for determining carrier lifetime of the HgTe/CdTe superlattice, the measured lifetime is 12\(\mu\)s at 77 K, which is the longest lifetime ever reported for HgTe/CdTe superlattices and we believe that the increase of lifetime is mainly due to the reduction of dimensions.
We report here that reconstruction on (100), (1lIlA, and (1l1lB CdTe surfaces is either C(2X2), (2X2), and (l X I) or (2X I), (l X I), and (l X I) when they are Cd or Te stabilized, respectively. There is a mixed region between Cd and Te stabilization in which the reflected high-energy electron-diffraction (RHEED) patterns contain characteristics of both Cd- and Te-stabilized surfaces. We have also found that the Cd-to-Te ratio of the x-ray photoelectron intensities of their 3d\(_{3/ 2}\) core levels is about 20% larger for a Cd-stabilized (1lIlA, (1lIlB, or (100) CdTe surface than for a Te-stabilized one. According to a simple model calculation, which was normalized by means of the photoelectron intensity ratio of a Cd-stabilized (lll)A and aTe-stabilized (1l1lB CdTe surface, the experimental data for CdTe surfaces can be explained by a linear dependence of the photoelectron-intensity ratio on the fraction of Cd in the uppermost monatomic layer. This surface composition can be correlated with the surface structure, i.e., the corresponding RHEED patterns. This correlation can in turn be employed to determine Te and Cd evaporation rates. The Te reevaporation rate is increasingly slower for the Te-stabilized (Ill) A, (l1l)B, and (100) surfaces, while the opposite is true for Cd from Cd-stabilized (Ill) A and (Ill)B surfaces. In addition, Te is much more easily evaporated from all the investigated surfaces than is Cd, if the substrate is kept at normal molecular-beam-epitaxy growth temperatures ranging from 2oo·C to 300 ·C.
In the present work we report the results of magneto-transport measurements on some Hg-based li-VI semiconductor epitaxiallayers grown by molecular beam epitaxy. The transport measurement were carried out at temperatures in the range 0.4 - 4.2 K in magnetic fields up to 10.0 T. Further, we point out the necessity of using multicarrier models for data interpretation and show finally some Shubnikov-de-Haas results on sampies with high mobility carners.
We have studied the lowest magnetic excitation of Ni\(_{1-x}\)Co\(_x\)O mixed crystals for 0.94 \(\leq\) x \(\leq\) 1. Together with previous results for 0.02 \(\leq\) x \(\leq\) 0.07 and neutron data for x = 0.14 and x = 0.30, the results are discussed by means of a model, especially the variation of AFMR frequency and preferred spin direction with Co concentration x.
We report the results of a detailed investigation on the Te-stabilized (2 x 1) and the Cdstabilized c( 2 X 2) surfaces of ( 100) CdTe substrates. The investigation demonstrates for the first time that both laser illumination and, to a greater extent, high-energy electron irradiation increase the Te desorption and reduce the Cd desorption from ( 100) CdTe surfaces. Thus it is possible by choosing the proper growth temperature and photon or electron fluxes to change the surface reconstruction from the normally Te-stabilized to a Cd-stabilized phase.
Merkel cell carcinoma (MCC) is a virally associated cancer characterized by its aggressive behavior and strong immunogenicity. Both viral infection and malignant transformation induce expression of MHC class I chain-related protein (MIC) A and B, which signal stress to cells of the immune system via Natural Killer group 2D (NKG2D) resulting in elimination of target cells. However, despite transformation and the continued presence of virally-encoded proteins, MICs are only expressed in a minority of MCC tumors in situ and are completely absent on MCC cell lines in vitro. This lack of MIC expression was due to epigenetic silencing via MIC promoter hypo-acetylation; indeed, MIC expression was re-induced by pharmacological inhibition of histone deacetylases (HDACs) both in vitro and in vivo. This re-induction of MICs rendered MCC cells more sensitive to immune-mediated lysis. Thus, epigenetic silencing of MICs is an important immune escape mechanism of MCCs.
Transmission of Trypanosoma brucei by tsetse flies involves the deposition of the cell cycle-arrested metacyclic life cycle stage into mammalian skin at the site of the fly’s bite. We introduce an advanced human skin equivalent and use tsetse flies to naturally infect the skin with trypanosomes. We detail the chronological order of the parasites’ development in the skin by single-cell RNA sequencing and find a rapid activation of metacyclic trypanosomes and differentiation to proliferative parasites. Here we show that after the establishment of a proliferative population, the parasites enter a reversible quiescent state characterized by slow replication and a strongly reduced metabolism. We term these quiescent trypanosomes skin tissue forms, a parasite population that may play an important role in maintaining the infection over long time periods and in asymptomatic infected individuals.
Auxin is a key regulator of plant growth and development, but the causal relationship between hormone transport and root responses remains unresolved. Here we describe auxin uptake, together with early steps in signaling, in Arabidopsis root hairs. Using intracellular microelectrodes we show membrane depolarization, in response to IAA in a concentration- and pH-dependent manner. This depolarization is strongly impaired in aux1 mutants, indicating that AUX1 is the major transporter for auxin uptake in root hairs. Local intracellular auxin application triggers Ca2+ signals that propagate as long-distance waves between root cells and modulate their auxin responses. AUX1-mediated IAA transport, as well as IAA- triggered calcium signals, are blocked by treatment with the SCFTIR1/AFB - inhibitor auxinole. Further, they are strongly reduced in the tir1afb2afb3 and the cngc14 mutant. Our study reveals that the AUX1 transporter, the SCFTIR1/AFB receptor and the CNGC14 Ca2+ channel, mediate fast auxin signaling in roots.