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The molecular beam epitaxially growth of (001) Hg\(_{1-x}\) Cd\(_z\) Te-HgTe superlattices has been systematically investigated. The well width as well as the period were determined directly by X-ray diffraction. This was accomphshed for the well width by exploiting the high reflectivity from HgTe and the low reflectivity from CdTe for the (002) Bragg reflection. Knowing the well and barrier thicknesses we have been able to set an upper limit on the aver~ge composition of the barriers, Xl, by annealing the superlattice and then measuring the composition of the. resultmg alloy. Xb was shown to decrease exponentially with decreasing barrier width. Xb is appreciably smaller m. narrow barriers due to the increased significance of interdiffusion in the Hg\(_{1-x}\)Cd\(_x\) Te/HgTe interface in narrow barriers. The experimentally determined optical absorption coefficient for these superlattices is compared WIth theoretical calculations. The absorption coefficient was determined from transmission and reflection spectra at 300, 77 and 5 K. Using the thickness and composition of the barriers and wells, and an interface width due to interdiffusion, the complex refractive index is calculated and compared with the experimental absorption coefficient. The envelope function method based on an 8 x 8 second order k . p band model was used to calculate the superlattice states. These results when inserted into Kubo's formula, yield the dynamic conductivity for interband transitions. The experimental and theoretical values for the absorption coefficient using no adjustable parameters are in good agreement for most of the investigated superlattices. Furthermore the agreement for the higher energetic interband transitions is much worse if values for the barrier composition, which are appreciably different than the experimentally determined values, are used. The infrared photoluminescence was investigated at temperatures from 4.2 to 300 K. Pronounced photoluminescence was observed for all superlattices in this temperature range.
We report on the growth of the compound semiconductor MgTe as weil as the ternary alloy Cd\(_{l-x}\)Mg, Te by molecular hcam cpitaxy. This is to our knowkdgc thc first time that this material has heen grown by any epitaxial technique. Bulk MgTe, which is hygroscopic, has a band gap of 3.0 eV and crystallizcs usually in thc wurtzite structure. Pseudomorphic films were grown on zincblende Cd Te suhstrates for a MgTe thickness helow a critical layer thickncss of approximately 500 nm. In addition, Cd\(_{l_x}\),Mg\(_x\)Te epilayers were grown with a Mg concentration between 0 and 68%, which corresponds to a band gap betwcen 1.5 and 2.5 eV at room temperature. The crystalline quality of thc layers is comparabk to CdTc thin films as long as they are fully strained. The lauice constant of zincblende MgTe is slightly smaller than that of CdTe, and the lattice mismatch is as low as O.7%. In addition highly n-type CdMgTe layers were fabricatcd by hromine doping. The tunability of the band gap as weil as the rather good laUice match with CdTc makes the matcrial interesting for optoelectronic device applications for the entire visible range.
A semiempirical model is presented that correlates the broadening of the absorption edge with both transitions below the energy gap and with transitions by the Kane band model. This model correctly fits both the absorption and luminescence spectra of narrow-gap (Hg,Cd)Te samples that have been grown by the traveling heater method as well as by molecular-beam epitaxy. The accuracy of the band-gap determination is enhanced by this model.
New resonant-mode infrared absorption lines have been observed in NaCl with high concentrations of fluorine impurities. The quadratic concentration dependence of the strength of these lines indicates that they are due to pairs of fluorine impurities. At the resonant frequencies, the motion of some host ions appears to be as important as the motion of the impurities themselves.
The structural properties of HgSe grown by molecular beam epitaxy (MBE) are investigated for different lattice mismatches to the substrate and various growth conditions. The growth rate is shown to depend strongly on the growth temperature above lOO°C as well as on the Hg/Se flux ratio. It has been found that the crystalline perfection and the electrical properties are mainly determined by the layer thickness, especially for the growth on highly lattice mismatched substrates. Changes in the surface morphology are related to growth parameters. Differences between the electrical behavior of MBE-grown and bulk HgSe are discussed. The electrical properties of HgSe contacts on p-ZnSe are investigated as a function of different annealing procedures.
The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CH\(_4\)-CH\(_2\) gases has been employed to prepare stripes with a width of about 1 μm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes.
Molecular beam epitaxially grown short period (001) Hg\(_{1_x}\)Cd\(_x\)Te-HgTe superlattices have been systematically investigated. Several narrow well widths were chosen, e.g., 30, 35 and 40 Å, and the barrier widths were varied between 24 and 90 Å for a particular well width. Both the well width and the total period were determined directly by means of x-ray diffraction. The well width was determined by exploiting the high reflectivity from HgTe and the low reflectivity from CdTe for the (002) Bragg reflection. Knowing the well and barrier widths we have been able to set an upper limit on the average Cd concentration of the barriers, \(\overline x_b\), by annealing several superlattices and then measuring the composition of the resulting alloy. \(\overline x_b\) was shown to decrease exponentially with decreasing barrier width. The structure of a very short period superlattice, i.e., 31.4 Å, was also investigated by transmission electron microscopy, corroborating the x-ray diffraction results.
Infrared photoconductor fabricated with HgTe/CdTe superlattice grown by molecular beam epitaxy
(1993)
An infrared photoconductor fabricated with a HgTe/CdTe superlattice grown on a GaAs substrate by molecular beam epitaxy is described here for the first time. The growth procedure, device fabrication, and measurement results are described. The results show that the device has relatively high uniformity and 1000 K black-body detectivity 2.4 X 10\(^9\) cm Hz\(^{1/2}\) W\(^{-1}\) . The photoconductivity decay method was used for determining carrier lifetime of the HgTe/CdTe superlattice, the measured lifetime is 12\(\mu\)s at 77 K, which is the longest lifetime ever reported for HgTe/CdTe superlattices and we believe that the increase of lifetime is mainly due to the reduction of dimensions.
The observed impurity induced far-infrared absorption in CsCl : Rb\(^+\) and CsCl : K\(^+\) is compared with a calculated density of acoustic phonon states in CsCl. The absorption due to CsCl : Rb\(^+\) displays a minimum between the acoustic and optic phonon bands. A narrow line is observed in CsCl: K\(^+\) at 85.8 cm\(^{-1}\) which falls in this quasi-phonon gap.
The photoconductivity of both undeformed and deformed Te samples has been investigated at liquid He temperature by means of a Fourier spectrometer. Three peaks were usually found in the spectra of undeformed samples at 11, 24 and 46 cm\(^{-1}\). These are shown to be due to three different chemical impurities. The deformed samples are characterized by additional structure at higher frequencies.