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Josephson junctions (JJs) in the presence of a magnetic field exhibit qualitatively different interference patterns depending on the spatial distribution of the supercurrent through the junction. In JJs based on two-dimensional topological insulators (2DTIs), the electrons/holes forming a Cooper pair (CP) can either propagate along the same edge or be split into the two edges. The former leads to a SQUID-like interference pattern, with the superconducting flux quantum ϕ\(_0\) (where ϕ\(_0\)=h/2e) as a fundamental period. If CPs’ splitting is additionally included, the resultant periodicity doubles. Since the edge states are typically considered to be strongly localized, the critical current does not decay as a function of the magnetic field. The present paper goes beyond this approach and inspects a topological JJ in the tunneling regime featuring extended edge states. It is here considered the possibility that the two electrons of a CP propagate and explore the junction independently over length scales comparable to the superconducting coherence length. As a consequence of the spatial extension, a decaying pattern with different possible periods is obtained. In particular, it is shown that, if crossed Andreev reflections (CARs) are dominant and the edge states overlap, the resulting interference pattern features oscillations whose periodicity approaches 2ϕ\(_0\).
Effective lifting of the topological protection of quantum spin Hall edge states by edge coupling
(2022)
The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics are based on the topological protection and spin-momentum locking of their helical edge states. In this study we present experimental evidence that topological protection can be (partially) lifted by pairwise coupling of 2D TI edges in close proximity. Using direct wave function mapping via scanning tunneling microscopy/spectroscopy (STM/STS) we compare isolated and coupled topological edges in the 2D TI bismuthene. The latter situation is realized by natural lattice line defects and reveals distinct quasi-particle interference (QPI) patterns, identified as electronic Fabry-Pérot resonator modes. In contrast, free edges show no sign of any single-particle backscattering. These results pave the way for novel device concepts based on active control of topological protection through inter-edge hybridization for, e.g., electronic Fabry-Pérot interferometry.
The electrodynamics of topological insulators (TIs) is described by modified Maxwell’s equations, which contain additional terms that couple an electric field to a magnetization and a magnetic field to a polarization of the medium, such that the coupling coefficient is quantized in odd multiples of α/4π per surface. Here we report on the observation of this so-called topological magnetoelectric effect. We use monochromatic terahertz (THz) spectroscopy of TI structures equipped with a semitransparent gate to selectively address surface states. In high external magnetic fields, we observe a universal Faraday rotation angle equal to the fine structure constant α=e\(^{2}\)/2E\(_{0}\)hc (in SI units) when a linearly polarized THz radiation of a certain frequency passes through the two surfaces of a strained HgTe 3D TI. These experiments give insight into axion electrodynamics of TIs and may potentially be used for a metrological definition of the three basic physical constants.
We present a comprehensive theoretical study of the static spin response in HgTe quantum wells, revealing distinctive behavior for the topologically nontrivial inverted structure. Most strikingly, the q=0 (long-wavelength) spin susceptibility of the undoped topological-insulator system is constant and equal to the value found for the gapless Dirac-like structure, whereas the same quantity shows the typical decrease with increasing band gap in the normal-insulator regime. We discuss ramifications for the ordering of localized magnetic moments present in the quantum well, both in the insulating and electron-doped situations. The spin response of edge states is also considered, and we extract effective Landé g factors for the bulk and edge electrons. The variety of counterintuitive spin-response properties revealed in our study arises from the system’s versatility in accessing situations where the charge-carrier dynamics can be governed by ordinary Schrödinger-type physics; it mimics the behavior of chiral Dirac fermions or reflects the material’s symmetry-protected topological order.
Density functional theory (DFT) is applied to study the atomic, electronic, and spin structures of the Au monolayer at the Ge(111) surface. It is found that the theoretically determined most stable atomic geometry is described by the conjugated honeycomb-chained-trimer (CHCT) model, in a very good agreement with experimental data. The calculated electronic structure of the system, being in qualitatively good agreement with the photoemission measurements, shows fingerprints of the many-body effects (self-interaction corrections) beyond the LDA or GGA approximations. The most interesting property of this surface system is the large spin splitting of its metallic surface bands and the undulating spin texture along the hexagonal Fermi contours, which highly resembles the spin texture at the Dirac state of the topological insulator Bi\(_{2}\)Te\(_{3}\). These properties make this system particularly interesting from both fundamental and technological points of view.
The adiabatic insertion of a \(\pi\) flux into a quantum spin Hall insulator gives rise to localized spin and charge fluxon states. We demonstrate that \(\pi\) fluxes can be used in exact quantum Monte Carlo simulations to identify a correlated \(Z_2\) topological insulator using the example of the Kane-Mele-Hubbard model. In the presence of repulsive interactions, a \(\pi\) flux gives rise to a Kramers doublet of spin-fluxon states with a Curie-law signature in the magnetic susceptibility. Electronic correlations also provide a bosonic mode of magnetic excitons with tunable energy that act as exchange particles and mediate a dynamical interaction of adjustable range and strength between spin fluxons. \(\pi\) fluxes can therefore be used to build models of interacting spins. This idea is applied to a three-spin ring and to one-dimensional spin chains. Because of the freedom to create almost arbitrary spin lattices, correlated topological insulators with \(\pi\) fluxes represent a novel kind of quantum simulator, potentially useful for numerical simulations and experiments.
Topological insulators are electronic phases that insulate in the bulk and accommodate a peculiar, metallic edge liquid with a spin-dependent dispersion.
They are regarded to be of considerable future use in spintronics and for quantum computation.
Besides determining the intrinsic properties of this rather novel electronic phase, considering its combination with well-known physical systems can generate genuinely new physics.
In this thesis, we report on such combinations including topological insulators. Specifically, we analyze an attached Rashba impurity, a Kondo dot in the two channel setup, magnetic impurities on the surface of a strong three-dimensional topological insulator, the proximity coupling of the latter system to a superconductor, and hybrid systems consisting of a topological insulator and a semimetal.
Let us summarize our primary results.
Firstly, we determine an analytical formula for the Kondo cloud and describe its possible detection in current correlations far away from the Kondo region.
We thereby rely on and extend the method of refermionizable points.
Furthermore, we find a class of gapless topological superconductors and semimetals, which accommodate edge states that behave similarly to the ones of globally gapped topological phases. Unexpectedly, we also find edge states that change their chirality when affected by sufficiently strong disorder.
We regard the presented research helpful in future classifications and applications of systems containing topological insulators, of which we propose some examples.
In the field of spintronics, spin manipulation and spin transport are the main principles that need to be implemented. The main focus of this thesis is to analyse semiconductor systems where high fidelity in these principles can be achieved. To this end, we use numerical methods for precise results, supplemented by simpler analytical models for interpretation.
The material system of 2D topological insulators, HgTe/CdTe quantum wells, is interesting not only because it provides a topologically distinct phase of matter, physically manifested in its protected transport properties, but also since within this system, ballistic transport of high quality can be realized, with Rashba spin-orbit coupling and electron densities that are tunable by electrical gating. Extending the Bernvevig-Hughes-Zhang model for 2D topological insulators, we derive an effective four-band model including Rashba spin-orbit terms due to an applied potential that breaks the spatial inversion symmetry of the quantum well. Spin transport in this system shows interesting physics because the effects of Rashba spin-orbit terms and the intrinsic Dirac-like spin-orbit terms compete. We show that the resulting spin Hall signal can be dominated by the effect of Rashba spin-orbit coupling. Based on spin splitting due to the latter, we propose a beam splitter setup for all-electrical generation and detection of spin currents. Its working principle is similar to optical birefringence. In this setup, we analyse spin current and spin polarization signals of different spin vector components and show that large in-plane spin polarization of the current can be obtained. Since spin is not a conserved quantity of the model,
we first analyse the transport of helicity, a conserved quantity even in presence of Rashba spin-orbit terms. The polarization defined in terms of helicity is related to in-plane polarization of the physical spin.
Further, we analyse thermoelectric transport in a setup showing the spin Hall effect. Due to spin-orbit coupling, an applied temperature gradient generates a transverse spin current, i.e. a spin Nernst effect, which is related to the spin Hall effect by a Mott-like relation. In the metallic energy regimes, the signals are qualitatively explained by simple analytic models. In the insulating regime, we observe a spin Nernst signal that originates from the finite-size induced overlap of edge states.
In the part on methods, we discuss two complementary methods for construction of effective semiconductor models, the envelope function theory and the method of invariants. Further, we present elements of transport theory, with some emphasis on spin-dependent signals. We show the connections of the adiabatic theorem of quantum mechanics to the semiclassical theory of electronic transport and to the characterization of topological phases. Further, as application of the adiabatic theorem to a control problem, we show that universal control of a single spin in a heavy-hole quantum dot is experimentally realizable without breaking time reversal invariance,
but using a quadrupole field which is adiabatically changed as control knob. For experimental realization, we propose a GaAs/GaAlAs quantum well system.
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensional topological insulator and exclusively shows surface-state transport. Remarkably, the Landau-level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range (3×1011 cm−2<n<2×1012 cm−2). These observations imply that even at large carrier densities, the transport is surface-state dominated, where bulk transport would have been expected to coexist already. Moreover, the density dependence of the Dirac-type quantum Hall effect allows us to identify the contributions from the individual surfaces. A k⋅p model can describe the experiments but only when assuming a steep band bending across the regions where the topological surface states are contained. This steep potential originates from the specific screening properties of Dirac systems and causes the gate voltage to influence the position of the Dirac points rather than that of the Fermi level.