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The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.
Efficient and fast on-demand single photon sources have been sought after as critical components of quantum information science. We report an efficient and tunable single photon source based on an InAs quantum dot (QD) embedded in a photonic crystal cavity coupled with a highly curved \(\mu\)-fibre. Exploiting evanescent coupling between the \(\mu\)-fibre and the cavity, a high collection efficiency of 23% and Purcell-enhanced spontaneous emissions are observed. In our scheme, the spectral position of a resonance can be tuned by as much as 1.5 nm by adjusting the contact position of the \(\mu\)-fibre, which increases the spectral coupling probability between the QD and the cavity mode. Taking advantage of the high photon count rate and the tunability, the collection efficiencies and the decay rates are systematically investigated as a function of the QD-cavity detuning.
Electro-optical switching between polariton and cavity lasing in an InGaAs quantum well microcavity
(2014)
We report on the condensation of microcavity exciton polaritons under optical excitation in a microcavity with four embedded InGaAs quantum wells. The polariton laser is characterized by a distinct nonlinearity in the input-output-characteristics, which is accompanied by a drop of the emission linewidth indicating temporal coherence and a characteristic persisting emission blueshift with increased particle density. The temporal coherence of the device at threshold is underlined by a characteristic drop of the second order coherence function to a value close to 1. Furthermore an external electric field is used to switch between polariton regime, polariton condensate and photon lasing.
We report on a quasi-planar quantum-dot-based single-photon source that shows an unprecedented high extraction efficiency of 42% without complex photonic resonator geometries or post-growth nanofabrication. This very high efficiency originates from the coupling of the photons emitted by a quantum dot to a Gaussian shaped nanohill defect that naturally arises during epitaxial growth in a self-aligned manner. We investigate the morphology of these defects and characterize the photonic operation mechanism. Our results show that these naturally arising coupled quantum dot-defects provide a new avenue for efficient (up to 42% demonstrated) and pure (g(2)(0) value of 0.023) single-photon emission.
Highly efficient single-photon sources (SPS) can increase the secure key rate of quantum key distribution (QKD) systems compared to conventional attenuated laser systems. Here we report on a free space QKD test using an electrically driven quantum dot single-photon source (QD SPS) that does not require a separate laser setup for optical pumping and thus allows for a simple and compact SPS QKD system. We describe its implementation in our 500 m free space QKD system in downtown Munich. Emulating a BB84 protocol operating at a repetition rate of 125 MHz, we could achieve sifted key rates of 5-17 kHz with error ratios of 6-9% and g((2))(0)-values of 0.39-0.76.
The second-order correlation function g\(^2\)(\(\tau\) = 0), input-output curves and pulse duration of the emission from a microcavity exciton-polariton system subsequent to picosecond-pulsed excitation are measured for different temperatures. At low temperatures a two-threshold behaviour emerges, which has been attributed to the onset of polariton lasing and conventional lasing at the first and the second threshold, respectively. We observe that polariton lasing is stable up to temperatures comparable with the exciton binding energy. At higher temperatures a single threshold displays the direct transition from thermal emission to photon lasing.