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During development of the nervous system, spontaneous Ca2+ transients are observed that regulate the axon growth of motoneurons. This form of spontaneous neuronal activity is reduced in motoneurons from a mouse model of spinal muscular atrophy and this defect correlates with reduced axon elongation. Experiments from our group demonstrated that voltage-gated sodium channel pore blockers decrease spontaneous neuronal activity and
axon growth in cultured motoneurons, too. In these experiments, saxitoxin was more potent than tetrodotoxin. We identified the saxitoxin-sensitive/tetrodotoxin-insensitive voltage-gated sodium channel NaV1.9 as trigger for the opening of voltage-gated calcium channels. In motoneurons, expression of NaV1.9 was verified via quantitative RT-PCR. Immuno labelling
experiments revealed enrichment of the channel in axonal growth cones and at the nodes of Ranvier of isolated nerve fibres from wild type mice. Motoneurons from NaV1.9 knock-out mice show decreased spontaneous activity and reduced axonal elongation. This growth defect can be rescued by NaV1.9 overexpression. In motoneurons from Smn-deficient mice, NaV1.9 distribution appeared to be normal.
Recently, patients carrying a missense mutation in the NaV1.9-encoding gene SCN11A were identified. These patients are not able to feel pain and suffer from muscular weakness and a delayed motor development. Molecular biological work during this dissertation supported the analysis of this mutation in a mouse model carrying the orthologous alteration in the Scn11a
locus. The cooperation study confirmed that a gain-of-function mechanism underlies the NaV1.9-mediated channelopathy, thus suggesting a functional role of NaV1.9 in human motoneurons.
An earlier study showed in hippocampal neurons that the receptor tyrosine kinase tropomyosin receptor kinase B (TrkB) can open the NaV1.9 channel. TrkB is localized in
growth cones of motoneurons and subsequently found in close proximity to NaV1.9. In order to proof whether TrkB is involved in spontaneous excitability in motoneurons, TrkB knock-out mice were analysed. Isolated motoneurons from TrkB knock-out mice show a reduced spontaneous activity and axon elongation. It remains to be studied whether TrkB and NaV1.9 are functionally connected.
When bovine or human growth hormones (GH) were injected into 6 months old (about 10 g) gilthead seabream, the growth rate of the fish, as measured by changes in their weight, increased by only about 15% compared with the saline-injected control. No effect or even slight inhibition of the growth rate was obtained when chicken or porcine GHs were injected. In a preliminary experiment, it was found that injection ofthe native GH increased the growth rate ofthe fish by about 20% after treatment for only 2 weeks. An expression vector, using the pRE1 plasmid and transformation into MZl cells, produced the gilthead seabream GH, providing a supply for further experiments on the effect of the homologaus GH on growth. Two reporter genes, ß-galactosidase (lacZ) and melanoma oncogene of Xiphophorus (mrk YY), were microinjected into fertilized eggs of S. aurata. Expression of these two genes could be demonstrated in 2-day-old embryos, the lacZ gene by staining of its enzymatic product, and the mrk YY gene by its phenotypic expression.
Oxide heterostructures attract a lot of attention as they display a vast range of physical phenomena like conductivity, magnetism, or even superconductivity. In most cases, these effects are caused by electron correlations and are therefore interesting for studying fundamental physics, but also in view of future applications. This thesis deals with the growth and characterization of several prototypical oxide heterostructures. Fe3O4 is highly ranked as a possible spin electrode in the field of spintronics. A suitable semiconductor for spin injection in combination with Fe3O4 is ZnO due to its oxide character and a sufficiently long spin coherence length. Fe3O4 has been grown successfully on ZnO using pulsed laser deposition and molecular beam epitaxy by choosing the oxygen partial pressure adequately. Here, a pressure variation during growth reduces an FeO-like interface layer. Fe3O4 films grow in an island-like growth mode and are structurally nearly fully relaxed, exhibiting the same lattice constants as the bulk materials. Despite the presence of a slight oxygen off-stoichiometry, indications of the Verwey transition hint at high-quality film properties. The overall magnetization of the films is reduced compared to bulk Fe3O4 and a slow magnetization behavior is observed, most probably due to defects like anti-phase boundaries originating from the initial island growth. LaAlO3/SrTiO3 heterostructures exhibit a conducting interface above a critical film thickness, which is most likely explained by an electronic reconstruction. In the corresponding model, the potential built-up owing to the polar LaAlO3 overlayer is compensated by a charge transfer from the film surface to the interface. The properties of these heterostructures strongly depend on the growth parameters. It is shown for the first time, that it is mainly the total pressure which determines the macroscopic sample properties, while it is the oxygen partial pressure which controls the amount of charge carriers near the interface. Oxygen-vacancy-mediated conductivity is found for too low oxygen pressures. A too high total pressure, however, destroys interface conductivity, most probably due to a change of the growth kinetics. Post-oxidation leads to a metastable state removing the arbitrariness in controlling the electronic interface properties by the oxygen pressure during growth. LaVO3/SrTiO3 heterostructures exhibit similar behavior compared to LaAlO3/SrTiO3 when it comes to a thickness-dependent metal-insulator transition. But in contrast to LaAlO3, LaVO3 is a Mott insulator exhibiting strong electron correlations. Films have been grown by pulsed laser deposition. Layer-by-layer growth and a phase-pure pervoskite lattice structure is observed, indicating good structural quality of the film and the interface. An electron-rich layer is found near the interface on the LaVO3 side for conducting LaVO3/SrTiO3. This could be explained by an electronic reconstruction within the film. The electrostatic doping results in a band-filling-controlled metal-insulator transition without suffering from chemical impurities, which is unavoidable in conventional doping experiments.