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Ferromagnetic semiconductors (FS) promise the integration of magnetic memory functionalities and semiconductor information processing into the same material system. The prototypical FS (Ga,Mn)As has become the focus of semiconductor spintronics research over the past years. The spin-orbit mediated coupling of magnetic and semiconductor properties in this material gives rise to many novel transport-related phenomena which can be harnessed for device applications. In this thesis we address challenges faced in the development of an all-semiconductor memory architecture. A starting point for information storage in FS is the knowledge of their detailed magnetic anisotropy. The first part of this thesis concentrates on the investigation of the magnetization behaviour in compressively strained (Ga,Mn)As by electrical means. The angle between current and magnetization is monitored in magnetoresistance(MR) measurements along many in-plane directions using the Anisotropic MR(AMR) or Planar Hall effect(PHE). It is shown, that a full angular set of such measurements displayed in a color coded resistance polar plot can be used to identify and quantitatively determine the symmetry components of the magnetic anisotropy of (Ga,Mn)As at 4 K. We compile such "anisotropy fingerprints" for many (Ga,Mn)As layers from Wuerzburg and other laboratories and find the presence of three symmetry terms in all layers. The biaxial anisotropy term with easy axes along the [100] and [010] crystal direction dominates the magnetic behaviour. An additional uniaxial term with an anisotropy constant of ~10% of the biaxial one has its easy axis along either of the two <110> directions. A second contribution of uniaxial symmetry with easy axis along one of the biaxial easy axes has a strength of only ~1% of the biaxial anisotropy and is therefore barely visible in standard SQUID measurements. An all-electrical writing scheme would be desirable for commercialization. We report on a current assisted magnetization manipulation experiment in a lateral (Ga,Mn)As nanodevice at 4 K (far below Tc). Reading out the large resistance signal from DW that are confined in nanoconstrictions, we demonstrate the current assisted magnetization switching of a small central island through a hole mediated spin transfer from the adjacent leads. One possible non-perturbative read-out scheme for FS memory devices could be the recently discovered Tunneling Anisotropic MagnetoResistance (TAMR) effect. Here we clarify the origin of the large amplification of the TAMR amplitude in a device with an epitaxial GaAs tunnel barrier at low temperatures. We prove with the help of density of states spectroscopy that a thin (Ga,Mn)As injector layer undergoes a metal insulator transition upon a change of the magnetization direction in the layer plane. The two states can be distinguished by their typical power law behaviour in the measured conductance vs voltage tunneling spectra. While all hereto demonstrated (Ga,Mn)As devices inherited their anisotropic magnetic properties from their parent FS layer, more sophisticated FS architectures will require locally defined FS elements of different magnetic anisotropy on the same wafer. We show that shape anisotropy is not applicable in FS because of their low volume magnetization. We present a method to lithographically engineer the magnetic anisotropy of (Ga,Mn)As by submicron patterning. Anisotropic strain relaxation in submicron bar structures (nanobars) and the related deformation of the crystal lattice introduce a new uniaxial anisotropy term in the energy equation. We demonstrate by both SQUID and transport investigations that this lithographically induced uniaxial anisotropy overwrites the intrinsic biaxial anisotropy at all temperatures up to Tc. The final section of the thesis combines all the above into a novel device scheme. We use anisotropy engineering to fabricate two orthogonal, magnetically uniaxial, nanobars which are electrically connected through a constriction. We find that the constriction resistance depends on the relative orientation of the nanobar magnetizations, which can be written by an in-plane magnetic field. This effect can be explained with the AMR effect in connection with the field line patterns in the respective states. The device offers a novel non-volatile information storage scheme and a corresponding non-perturbative read-out method. The read out signal is shown to increase drastically in samples with partly depleted constriction region. This could be shown to originate in a magnetization direction driven metal insulator transition of the material in the constriction region.
Most natural learning situations are of a complex nature and consist of a tight conjunction of the animal's behavior (B) with the perceived stimuli. According to the behavior of the animal in response to these stimuli, they are classified as being either biologically neutral (conditioned stimuli, CS) or important (unconditioned stimuli, US or reinforcer). A typical learning situation is thus identified by a three term contingency of B, CS and US. A functional characterization of the single associations during conditioning in such a three term contingency has so far hardly been possible. Therefore, the operational distinction between classical conditioning as a behavior-independent learning process (CS-US associations) and operant conditioning as essentially behavior-dependent learning (B-US associations) has proven very valuable. However, most learning experiments described so far have not been successful in fully separating operant from classical conditioning into single-association tasks. The Drosophila flight simulator in which the relevant behavior is a single motor variable (yaw torque), allows for the first time to completely separate the operant (B-US, B-CS) and the classical (CS-US) components of a complex learning situation and to examine their interactions. In this thesis the contributions of the single associations (CS-US, B-US and B-CS) to memory formation are studied. Moreover, for the first time a particularly prominent single association (CS-US) is characterized extensively in a three term contingency. A yoked control shows that classical (CS-US) pattern learning requires more training than operant pattern learning. Additionally, it can be demonstrated that an operantly trained stimulus can be successfully transferred from the behavior used during training to a new behavior in a subsequent test phase. This result shows unambiguously that during operant conditioning classical (CS-US) associations can be formed. In an extension to this insight, it emerges that such a classical association blocks the formation of an operant association, which would have been formed without the operant control of the learned stimuli. Instead the operant component seems to develop less markedly and is probably merged into a complex three-way association. This three-way association could either be implemented as a sequential B-CS-US or as a hierarchical (B-CS)-US association. The comparison of a simple classical (CS-US) with a composite operant (B, CS and US) learning situation and of a simple operant (B-US) with another composite operant (B, CS and US) learning situation, suggests a hierarchy of predictors of reinforcement. Operant behavior occurring during composite operant conditioning is hardly conditioned at all. The associability of classical stimuli that bear no relation to the behavior of the animal is of an intermediate value, as is operant behavior alone. Stimuli that are controlled by operant behavior accrue associative strength most easily. If several stimuli are available as potential predictors, again the question arises which CS-US associations are formed? A number of different studies in vertebrates yielded amazingly congruent results. These results inspired to examine and compare the properties of the CS-US association in a complex learning situation at the flight simulator with these vertebrate results. It is shown for the first time that Drosophila can learn compound stimuli and recall the individual components independently and in similar proportions. The attempt to obtain second-order conditioning with these stimuli, yielded a relatively small effect. In comparison with vertebrate data, blocking and sensory preconditioning experiments produced conforming as well as dissenting results. While no blocking could be found, a sound sensory preconditioning effect was obtained. Possible reasons for the failure to find blocking are discussed and further experiments are suggested. The sensory preconditioning effect found in this study is revealed using simultaneous stimulus presentation and depends on the amount of preconditioning. It is argued that this effect is a case of 'incidental learning', where two stimuli are associated without the need of reinforcement. Finally, the implications of the results obtained in this study for the general understanding of memory formation in complex learning situations are discussed.