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- Physikalisches Institut (582) (remove)
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We have investigated oxygen on CdTe substrates by means of x-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). A Te oxide layer that was at least 15 A thick was found on the surface of as-delivered CdTe substrates that were mechanically polished. This oxide is not easily evaporated at temperatures lower than 350°C. Furthermore, heating in air, which further oxidizes the CdTe layer, should be avoided. Etching with HCI acid (15% HCl) for at least 20 s and then rinsing with de-ionized water reduces the Te oxide layer on the surface down to 4% of a monoatomic layer. However, according to XPS measurements of the 0 Is peak, 20%-30% of a monoatomic layer of oxygen remains on the surface, which can be eliminated by heating at temperatures ranging between 300 and 340 cC. The RHEED patterns for a molecular beam epitaxially (MBE)-grown CdTe film on a (lOO) CdTe substrate with approximately one monoatomic layer of oxidized Te on the surface lose the characteristics of the normal RHEED pattems for a MBE-grown CdTe film on an oxygen-free CdTe substrate.
Molecular beam epitaxially grown short period (001) Hg\(_{1_x}\)Cd\(_x\)Te-HgTe superlattices have been systematically investigated. Several narrow well widths were chosen, e.g., 30, 35 and 40 Å, and the barrier widths were varied between 24 and 90 Å for a particular well width. Both the well width and the total period were determined directly by means of x-ray diffraction. The well width was determined by exploiting the high reflectivity from HgTe and the low reflectivity from CdTe for the (002) Bragg reflection. Knowing the well and barrier widths we have been able to set an upper limit on the average Cd concentration of the barriers, \(\overline x_b\), by annealing several superlattices and then measuring the composition of the resulting alloy. \(\overline x_b\) was shown to decrease exponentially with decreasing barrier width. The structure of a very short period superlattice, i.e., 31.4 Å, was also investigated by transmission electron microscopy, corroborating the x-ray diffraction results.
Infrared photoconductor fabricated with HgTe/CdTe superlattice grown by molecular beam epitaxy
(1993)
An infrared photoconductor fabricated with a HgTe/CdTe superlattice grown on a GaAs substrate by molecular beam epitaxy is described here for the first time. The growth procedure, device fabrication, and measurement results are described. The results show that the device has relatively high uniformity and 1000 K black-body detectivity 2.4 X 10\(^9\) cm Hz\(^{1/2}\) W\(^{-1}\) . The photoconductivity decay method was used for determining carrier lifetime of the HgTe/CdTe superlattice, the measured lifetime is 12\(\mu\)s at 77 K, which is the longest lifetime ever reported for HgTe/CdTe superlattices and we believe that the increase of lifetime is mainly due to the reduction of dimensions.
We report the contactless determination of the conductivity, the mobility and the carrier concentration of II-VI semiconductors by means of the technique of the partially filled waveguide at a microwave frequency of 9 GHz. The samples are CdHgTe epitaxial layers, grown on CdZnTe substrates by molecular beam epitaxy. The conductivity is determined from the transmission coefficient of the sample in the partially filled waveguide. For the analysis of the experimental data, the complex transmission coefficient is calculated by a rigorous multi-mode matching procedure. By varying the conductivity of the sample, we obtain an optimum fit of the calculated data to the experimental results. Comparison with conductivity data determined by the van der Pauw method shows that our method allows to measure the conductivity with good accuracy. The behaviour of the transmission coefficient of the sample is discussed in dependence on the layer conductivity, the layer thickness and the dielectric constant of the substrate. The calculations require to consider in detail the distribution of the electromagnetic fields in the sample region. The usual assumption of a hardly disturbed TE\(_{10}\) mode cannot be used in our case. By applying a magnetic field in extraordinary Voigt configuration. galvanomagnetic measurements have been carried out which yield the mobility and thus the carrier concentration. These results are also in good agreement with van der Pauw transport measurements.
The microwave transmission and reßection is evaluated for stratified lossy dielectric segments partially filling the rectangular waveguide by the method which combines the multimode network theory with the rigorous mode matching procedure. As an example, we investigate in detail the microwave scattering properties of II-VI-epitaxial layer on a lossy dielectric substrate inserted in the rectangular waveguide. The experimental data verify the accuracy and the effectiveness of the present method. Extensive numerical results are presented to establish useful guidelines for the contactless microwave measurement of the conductivity of the epitaxiallayer.
The influence of different CdZnTe substrate treatments prior to II-VI molecular beam epitaxial growth on surface stoichiometry, oxygen, and carbon contamination has been studied using x-ray photoelectron spectroscopy and reflection high energy electron diffraction. Heating the substrate at 300 °C can eliminate oxygen contamination, but cannot completely remove carbon from the surface. Heating at higher temperatures decreases the carbon contamination only slightly, while increasing the Zn-Cd ratio on the surface considerably. The magnitude of the latter effect is surprising and is crucial when one is using lattice matched CdZnTe (Zn 4%) substrates.
We have grown HgTe/CdTe superlattices by molecular beam epitaxy; barrier thicknesses were in the range from 15 to 91 Å and the well thickness was maintained at a constant value of 30 Å. The infrared photoluminescence was investigated by means of Fourier transform infrared spectroscopy in the temperature range from 4.2 to 300 K. All superlattices showed pronounced photoluminescence at temperatures up to 300 K. To gain more detailed insight into the band structure of the HgTe/CdTe superlattices, band structure calculations were performed. The concept of the envelope function approximation was followed. Employing the transfer matrix method, the calculations were completed taking into account an eight band k·p model. An important parameter in these calculations is the natural valence band offset (VBO) between the well and barrier materials. As a general trend, the value for the direct gap decreases with increasing VBO. The experimentally determined energies of the band gap are in reasonable agreement with the values obtained by the theoretical calculations. A comparison between theory and experiment shows that the observed transition energies are closer to calculations employing a large offset (350 meV) as opposed to a small VBO (40 meV).
In the present work we report the results of magneto-transport measurements on some Hg-based li-VI semiconductor epitaxiallayers grown by molecular beam epitaxy. The transport measurement were carried out at temperatures in the range 0.4 - 4.2 K in magnetic fields up to 10.0 T. Further, we point out the necessity of using multicarrier models for data interpretation and show finally some Shubnikov-de-Haas results on sampies with high mobility carners.
We have investigated Cd\(_{1-x}\)Mn\(_x\)Te thin films with Mn concentrations of x=0.12, 0.18, 0.30, 0.52, and 0.70. These single crystal layers were grown by molecular beam epitaxy on [001] CdTe substrates. The real part of the refractive index, n, was determined below the band-gap Eo in the range of 0.5-2.5 eV at T=300 K. The parallel reOectivity was measured near the Brewster angle at the YAG laser wavelength of 1.064 J.Lm (hv= 1.165 eV). Combining these results with the optical pathlength results (nd) of reOection measurements in a Fourier spectrometer we have determined n(x,v) over a wide spectral range by utilizing a three parameter fit. The accuracy of these results for n should improve waveguide designs based on this material.
We report here that reconstruction on (100), (1lIlA, and (1l1lB CdTe surfaces is either C(2X2), (2X2), and (l X I) or (2X I), (l X I), and (l X I) when they are Cd or Te stabilized, respectively. There is a mixed region between Cd and Te stabilization in which the reflected high-energy electron-diffraction (RHEED) patterns contain characteristics of both Cd- and Te-stabilized surfaces. We have also found that the Cd-to-Te ratio of the x-ray photoelectron intensities of their 3d\(_{3/ 2}\) core levels is about 20% larger for a Cd-stabilized (1lIlA, (1lIlB, or (100) CdTe surface than for a Te-stabilized one. According to a simple model calculation, which was normalized by means of the photoelectron intensity ratio of a Cd-stabilized (lll)A and aTe-stabilized (1l1lB CdTe surface, the experimental data for CdTe surfaces can be explained by a linear dependence of the photoelectron-intensity ratio on the fraction of Cd in the uppermost monatomic layer. This surface composition can be correlated with the surface structure, i.e., the corresponding RHEED patterns. This correlation can in turn be employed to determine Te and Cd evaporation rates. The Te reevaporation rate is increasingly slower for the Te-stabilized (Ill) A, (l1l)B, and (100) surfaces, while the opposite is true for Cd from Cd-stabilized (Ill) A and (Ill)B surfaces. In addition, Te is much more easily evaporated from all the investigated surfaces than is Cd, if the substrate is kept at normal molecular-beam-epitaxy growth temperatures ranging from 2oo·C to 300 ·C.
We report the results of a detailed investigation on the Te-stabilized (2 x 1) and the Cdstabilized c( 2 X 2) surfaces of ( 100) CdTe substrates. The investigation demonstrates for the first time that both laser illumination and, to a greater extent, high-energy electron irradiation increase the Te desorption and reduce the Cd desorption from ( 100) CdTe surfaces. Thus it is possible by choosing the proper growth temperature and photon or electron fluxes to change the surface reconstruction from the normally Te-stabilized to a Cd-stabilized phase.
Non-Formal Education
(1989)
We have studied the lowest magnetic excitation of Ni\(_{1-x}\)Co\(_x\)O mixed crystals for 0.94 \(\leq\) x \(\leq\) 1. Together with previous results for 0.02 \(\leq\) x \(\leq\) 0.07 and neutron data for x = 0.14 and x = 0.30, the results are discussed by means of a model, especially the variation of AFMR frequency and preferred spin direction with Co concentration x.