75.50.Pp Magnetic semiconductors
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Keywords
- Magnetischer Halbleiter (5)
- Galliumarsenid (4)
- Manganarsenide (4)
- Ferromagnetic Semiconductors (3)
- Magnetic Anisotropy (3)
- Magnetoelektronik (3)
- Ferromagnetische Halbleiter (2)
- GaMnAs (2)
- Halbleiter (2)
- Magnetotransport (2)
Institute
This work studies the fundamental connection between lattice strain and magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As. The first chapters provide a general introduction into the material system and a detailed description of the growth process by molecular beam epitaxy. A finite element simulation formalism is developed to model the strain distribution in (Ga,Mn)As nanostructures is introduced and its predictions verified by high-resolution x-ray diffraction methods. The influence of lattice strain on the magnetic anisotropy is explained by an magnetostatic model. A possible device application is described in the closing chapter.