Resonant tunneling diodes: mid-infrared sensing at room temperature
Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-267152
- Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2–4 μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensorResonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2–4 μm range with significant electrical responsivity of 0.97 A/W at 2004 nm to optical readout. This paper characterizes the photosensor response contrasting different operational regimes and offering a comprehensive theoretical analysis of the main physical ingredients that rule the sensor functionalities and affect its performance. We demonstrate how the drift, accumulation, and escape efficiencies of photogenerated carriers influence the electrostatic modulation of the sensor's electrical response and how they allow controlling the device's sensing abilities.…
Autor(en): | Florian Rothmayr, Edgar David Guarin Castro, Fabian Hartmann, Georg Knebl, Anne Schade, Sven Höfling, Johannes Koeth, Andreas Pfenning, Lukas Worschech, Victor Lopez-Richard |
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URN: | urn:nbn:de:bvb:20-opus-267152 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | Nanomaterials |
ISSN: | 2079-4991 |
Erscheinungsjahr: | 2022 |
Band / Jahrgang: | 12 |
Heft / Ausgabe: | 6 |
Aufsatznummer: | 1024 |
Originalveröffentlichung / Quelle: | Nanomaterials (2022) 12:6, 1024. https://doi.org/10.3390/nano12061024 |
DOI: | https://doi.org/10.3390/nano12061024 |
Sonstige beteiligte Institutionen: | Wilhelm-Conrad-Röntgen-Forschungszentrum für komplexe Materialsysteme |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Freie Schlagwort(e): | mid-infrared sensing; photosensor; resonant tunneling diode |
Datum der Freischaltung: | 10.05.2023 |
Datum der Erstveröffentlichung: | 21.03.2022 |
EU-Projektnummer / Contract (GA) number: | 956548 |
OpenAIRE: | OpenAIRE |
Lizenz (Deutsch): | CC BY: Creative-Commons-Lizenz: Namensnennung 4.0 International |