Structural and optical properties of position-retrievable low-density GaAs droplet epitaxial quantum dots for application to single photon sources with plasmonic optical coupling
Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-143692
- The position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would beThe position of a single GaAs quantum dot (QD), which is optically active, grown by low-density droplet epitaxy (DE) (approximately 4 QDs/μm\(^{2}\)), was directly observed on the surface of a 45-nm-thick Al\(_{0.3}\)Ga\(_{0.7}\)As capping layer. The thin thickness of AlGaAs capping layer is useful for single photon sources with plasmonic optical coupling. A micro-photoluminescence for GaAs DE QDs has shown exciton/biexciton behavior in the range of 1.654 to 1.657 eV. The direct observation of positions of low-density GaAs DE QDs would be advantageous for mass fabrication of devices that use a single QD, such as single photon sources.…
Autor(en): | Eun-Hye Lee, Jin-Dong Song, Il-Ki Han, Soo-Kyung Chang, Fabian Langer, Sven Höfling, Alfred Forchel, Martin Kamp, Jong-Su Kim |
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URN: | urn:nbn:de:bvb:20-opus-143692 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | Nanoscale Research Letters |
Erscheinungsjahr: | 2015 |
Band / Jahrgang: | 10 |
Heft / Ausgabe: | 114 |
Originalveröffentlichung / Quelle: | Nanoscale Research Letters (2015) 10:114. DOI: 10.1186/s11671-015-0826-2 |
DOI: | https://doi.org/10.1186/s11671-015-0826-2 |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 539 Moderne Physik |
Freie Schlagwort(e): | GaAs; droplet epitaxy; micro-photoluminescence; quantum dot; single photon |
Datum der Freischaltung: | 30.05.2018 |
Lizenz (Deutsch): | CC BY: Creative-Commons-Lizenz: Namensnennung 4.0 International |