• search hit 89 of 1434
Back to Result List

Theory of excitons in atomically thin semiconductors: tight-binding approach

Please always quote using this URN: urn:nbn:de:bvb:20-opus-275243
  • Atomically thin semiconductors from the transition metal dichalcogenide family are materials in which the optical response is dominated by strongly bound excitonic complexes. Here, we present a theory of excitons in two-dimensional semiconductors using a tight-binding model of the electronic structure. In the first part, we review extensive literature on 2D van der Waals materials, with particular focus on their optical response from both experimental and theoretical points of view. In the second part, we discuss our ab initio calculations ofAtomically thin semiconductors from the transition metal dichalcogenide family are materials in which the optical response is dominated by strongly bound excitonic complexes. Here, we present a theory of excitons in two-dimensional semiconductors using a tight-binding model of the electronic structure. In the first part, we review extensive literature on 2D van der Waals materials, with particular focus on their optical response from both experimental and theoretical points of view. In the second part, we discuss our ab initio calculations of the electronic structure of MoS\(_2\), representative of a wide class of materials, and review our minimal tight-binding model, which reproduces low-energy physics around the Fermi level and, at the same time, allows for the understanding of their electronic structure. Next, we describe how electron-hole pair excitations from the mean-field-level ground state are constructed. The electron–electron interactions mix the electron-hole pair excitations, resulting in excitonic wave functions and energies obtained by solving the Bethe–Salpeter equation. This is enabled by the efficient computation of the Coulomb matrix elements optimized for two-dimensional crystals. Next, we discuss non-local screening in various geometries usually used in experiments. We conclude with a discussion of the fine structure and excited excitonic spectra. In particular, we discuss the effect of band nesting on the exciton fine structure; Coulomb interactions; and the topology of the wave functions, screening and dielectric environment. Finally, we follow by adding another layer and discuss excitons in heterostructures built from two-dimensional semiconductors.show moreshow less

Download full text files

Export metadata

Additional Services

Share in Twitter Search Google Scholar Statistics
Metadaten
Author: Maciej Bieniek, Katarzyna Sadecka, Ludmiła Szulakowska, Paweł Hawrylak
URN:urn:nbn:de:bvb:20-opus-275243
Document Type:Journal article
Faculties:Fakultät für Physik und Astronomie / Institut für Theoretische Physik und Astrophysik
Language:English
Parent Title (English):Nanomaterials
ISSN:2079-4991
Year of Completion:2022
Volume:12
Issue:9
Article Number:1582
Source:Nanomaterials (2022) 12:9, 1582. https://doi.org/10.3390/nano12091582
DOI:https://doi.org/10.3390/nano12091582
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Tag:Bethe–Salpeter equation; excitons; tight-binding; transition metal dichalcogenides
Release Date:2023/05/10
Date of first Publication:2022/05/06
Licence (German):License LogoCC BY: Creative-Commons-Lizenz: Namensnennung 4.0 International