Ferroelectric Control of the Spin Texture in GeTe
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- The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provideThe electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory and computing functionalities. Recently, GeTe has been theoretically proposed as the father compound of a new class of materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the ferroelectric control of the spin. Here, we provide the experimental demonstration of the correlation between ferroelectricity and spin texture. A surface-engineering strategy is used to set two opposite predefined uniform ferroelectric polarizations, inward and outward, as monitored by piezoresponse force microscopy. Spin and angular resolved photoemission experiments show that these GeTe(111) surfaces display opposite sense of circulation of spin in bulk Rashba bands. Furthermore, we demonstrate the crafting of nonvolatile ferroelectric patterns in GeTe films at the nanoscale by using the conductive tip of an atomic force microscope. Based on the intimate link between ferroelectric polarization and spin in GeTe, ferroelectric patterning paves the way to the investigation of devices with engineered spin configurations.…
Autor(en): | Christian Rinaldi, Sara Varotto, Marco Asa, Jagoda Slawinska, Jun Fujii, Giovanni Vinai, Stefano Cecchi, Domenico Di Sante, Raffaella Calarco, Ivana Vobornik, Giancarlo Panaccione, Silvia Picozzi, Riccardo Bertacco |
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URN: | urn:nbn:de:bvb:20-opus-226294 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Institut für Theoretische Physik und Astrophysik |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | Nano Letters |
Erscheinungsjahr: | 2018 |
Band / Jahrgang: | 18 |
Heft / Ausgabe: | 5 |
Seitenangabe: | 2751-2758 |
Originalveröffentlichung / Quelle: | Nano Lett. 2018, 18, 2751-2758 |
DOI: | https://doi.org/10.1021/acs.nanolett.7b04829 |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Freie Schlagwort(e): | Germanium telluride; Rashba effect; ferroelectricity; spin-orbitronics |
Datum der Freischaltung: | 29.03.2022 |
Lizenz (Deutsch): | CC BY-NC-ND: Creative-Commons-Lizenz: Namensnennung, Nicht kommerziell, Keine Bearbeitungen 4.0 International |