Silicon carbide light-emitting diode as a prospective room temperature source for single photons
Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-96308
- Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) ofGeneration of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light-emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in the visible and near infrared (NIR) spectral ranges, associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.…
Autor(en): | Georgy V. Astakhov, F. Fuchs, V. A. Soltamov, S. Väth, P. G. Baranov, E. N. Mokhov, V. Dyakonov |
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URN: | urn:nbn:de:bvb:20-opus-96308 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | Scientific Reports |
Erscheinungsjahr: | 2013 |
Originalveröffentlichung / Quelle: | In: Scientific Reports (2013) 3, doi:10.1038/srep01637 |
DOI: | https://doi.org/10.1038/srep01637 |
Sonstige beteiligte Institutionen: | Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg, Germany |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Freie Schlagwort(e): | inorganic LEDs; nanophotonics; plasmonics; quantum optics; semiconductors |
Datum der Freischaltung: | 28.04.2014 |
Sammlungen: | Open-Access-Publikationsfonds / Förderzeitraum 2013 |
Lizenz (Deutsch): | CC BY-NC-ND: Creative-Commons-Lizenz: Namensnennung, Nicht kommerziell, Keine Bearbeitung |