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Oxygen on the (100) CdTe surface

Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-37869
  • We have investigated oxygen on CdTe substrates by means of x-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). A Te oxide layer that was at least 15 A thick was found on the surface of as-delivered CdTe substrates that were mechanically polished. This oxide is not easily evaporated at temperatures lower than 350°C. Furthermore, heating in air, which further oxidizes the CdTe layer, should be avoided. Etching with HCI acid (15% HCl) for at least 20 s and then rinsing with de-ionized water reduces theWe have investigated oxygen on CdTe substrates by means of x-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). A Te oxide layer that was at least 15 A thick was found on the surface of as-delivered CdTe substrates that were mechanically polished. This oxide is not easily evaporated at temperatures lower than 350°C. Furthermore, heating in air, which further oxidizes the CdTe layer, should be avoided. Etching with HCI acid (15% HCl) for at least 20 s and then rinsing with de-ionized water reduces the Te oxide layer on the surface down to 4% of a monoatomic layer. However, according to XPS measurements of the 0 Is peak, 20%-30% of a monoatomic layer of oxygen remains on the surface, which can be eliminated by heating at temperatures ranging between 300 and 340 cC. The RHEED patterns for a molecular beam epitaxially (MBE)-grown CdTe film on a (lOO) CdTe substrate with approximately one monoatomic layer of oxidized Te on the surface lose the characteristics of the normal RHEED pattems for a MBE-grown CdTe film on an oxygen-free CdTe substrate.zeige mehrzeige weniger

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Metadaten
Autor(en): Y. S. Wu, Charles R. Becker, A. Waag, R. Schmiedl, S. Einfeldt, G. Landwehr
URN:urn:nbn:de:bvb:20-opus-37869
Dokumentart:Artikel / Aufsatz in einer Zeitschrift
Institute der Universität:Fakultät für Physik und Astronomie / Physikalisches Institut
Sprache der Veröffentlichung:Englisch
Erscheinungsjahr:1993
Originalveröffentlichung / Quelle:In : Journal of Applied Physics (1993) 73, 7385-7388.
Allgemeine fachliche Zuordnung (DDC-Klassifikation):5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Datum der Freischaltung:21.09.2009