Resonant Raman scattering in a zero-gap semiconductor: Interference effects and deformation potentials at the E\(_1\) and E\(_1\) + \(\Delta_1\) gaps of HgTe
Please always quote using this URN: urn:nbn:de:bvb:20-opus-38062
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Author: | M. Rösch, R. Atzmüller, G. Schaack, Charles R. Becker |
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URN: | urn:nbn:de:bvb:20-opus-38062 |
Document Type: | Journal article |
Faculties: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Language: | English |
Year of Completion: | 1994 |
Source: | In: Physical review B (1994) 49, 19, 13460-13474. |
Dewey Decimal Classification: | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Release Date: | 2009/09/23 |