Molecular beam epitaxy of TmTe thin films on SrF\(_{2}\) (111)
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- The odd parity nature of 4f states characterized by strong spin–orbit coupling and electronic correlations has led to a search for novel topological phases among rare earth compounds, such as Kondo systems, heavy Fermions, and homogeneous mixed-valent materials. Our target system is thulium telluride thin films whose bandgap is expected to be tuned as a function of lattice parameter. We systematically investigate the growth conditions of TmxTey thin films on SrF\(_{2}\) (111) substrates by molecular beam epitaxy. The ratio between Te and TmThe odd parity nature of 4f states characterized by strong spin–orbit coupling and electronic correlations has led to a search for novel topological phases among rare earth compounds, such as Kondo systems, heavy Fermions, and homogeneous mixed-valent materials. Our target system is thulium telluride thin films whose bandgap is expected to be tuned as a function of lattice parameter. We systematically investigate the growth conditions of TmxTey thin films on SrF\(_{2}\) (111) substrates by molecular beam epitaxy. The ratio between Te and Tm supply was precisely tuned, resulting in two different crystalline phases, which were confirmed by x-ray diffraction and x-ray photoemission spectroscopy. By investigating the crystalline quality as a function of the substrate temperature, the optimal growth conditions were identified for the desired Tm1Te1 phase. Additional low energy electron diffraction and reflective high energy electron diffraction measurements confirm the epitaxial growth of TmTe layers. X-ray reflectivity measurements demonstrate that homogeneous samples with sharp interfaces can be obtained for varied thicknesses. Our results provide a reliable guidance to prepare homogeneous high-quality TmTe thin films and thus serve as a basis for further electronic investigations.…
Autor(en): | S. Müller, F. Spriestersbach, C.-H. Min, C. I. Fornari, F. Reinert |
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URN: | urn:nbn:de:bvb:20-opus-300876 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | AIP Advances |
Erscheinungsjahr: | 2022 |
Band / Jahrgang: | 12 |
Heft / Ausgabe: | 2 |
Aufsatznummer: | 025319 |
Originalveröffentlichung / Quelle: | AIP Advances 2022, 12(2):025319. DOI: 10.1063/5.0083276 |
DOI: | https://doi.org/10.1063/5.0083276 |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Freie Schlagwort(e): | molecular beam epitaxy; thin films; thulium telluride |
Datum der Freischaltung: | 03.04.2023 |
Sammlungen: | Open-Access-Publikationsfonds / Förderzeitraum 2022 |
Lizenz (Deutsch): | CC BY: Creative-Commons-Lizenz: Namensnennung |