## Infrared photoconductor fabricated with HgTe/CdTe superlattice grown by molecular beam epitaxy

Please always quote using this URN: urn:nbn:de:bvb:20-opus-37772
• An infrared photoconductor fabricated with a HgTe/CdTe superlattice grown on a GaAs substrate by molecular beam epitaxy is described here for the first time. The growth procedure, device fabrication, and measurement results are described. The results show that the device has relatively high uniformity and 1000 K black-body detectivity 2.4 X 10$$^9$$ cm Hz$$^{1/2}$$ W$$^{-1}$$ . The photoconductivity decay method was used for determining carrier lifetime of the HgTe/CdTe superlattice, the measured lifetime is 12$$\mu$$s at 77 K, which is theAn infrared photoconductor fabricated with a HgTe/CdTe superlattice grown on a GaAs substrate by molecular beam epitaxy is described here for the first time. The growth procedure, device fabrication, and measurement results are described. The results show that the device has relatively high uniformity and 1000 K black-body detectivity 2.4 X 10$$^9$$ cm Hz$$^{1/2}$$ W$$^{-1}$$ . The photoconductivity decay method was used for determining carrier lifetime of the HgTe/CdTe superlattice, the measured lifetime is 12$$\mu$$s at 77 K, which is the longest lifetime ever reported for HgTe/CdTe superlattices and we believe that the increase of lifetime is mainly due to the reduction of dimensions.

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Author: Yueming Qiu, Li He, Jie Li, Shixin Yuan, Charles R. Becker, G. Landwehr urn:nbn:de:bvb:20-opus-37772 Journal article Fakultät für Physik und Astronomie / Physikalisches Institut English 1993 Applied Physics Letters (1993) 62, 10, 1134-1136. 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik 2009/09/22