Diffusion thermopower of a serial double quantum dot

Please always quote using this URN: urn:nbn:de:bvb:20-opus-129714
  • We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference 1T = (20±10)mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott’s relation and can be well understood within a model of sequential transport.

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Author: H. Thierschmann, M. Henke, J. Knorr, L. Maier, C. Heyn, W. Hansen, H. Buhmann, L. W. Molenkamp
Document Type:Journal article
Faculties:Fakultät für Physik und Astronomie / Physikalisches Institut
Parent Title (English):New Journal of Physics
Year of Completion:2013
Source:New Journal of Physics 15 (2013) 123010 (8pp). doi:10.1088/1367-2630/15/12/123010
Dewey Decimal Classification:5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Tag:quantum dot
Release Date:2016/06/27
Licence (German):License LogoCC BY: Creative-Commons-Lizenz: Namensnennung