Diffusion thermopower of a serial double quantum dot
Please always quote using this URN: urn:nbn:de:bvb:20-opus-129714
- We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference 1T = (20±10)mK across the device and find a maximum thermovoltage signal of several μV in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott’s relation and can be well understood within a model of sequential transport.
| Author: | H. Thierschmann, M. Henke, J. Knorr, L. Maier, C. Heyn, W. Hansen, H. Buhmann, L. W. Molenkamp |
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| URN: | urn:nbn:de:bvb:20-opus-129714 |
| Document Type: | Journal article |
| Faculties: | Fakultät für Physik und Astronomie / Physikalisches Institut |
| Language: | English |
| Parent Title (English): | New Journal of Physics |
| Year of Completion: | 2013 |
| Volume: | 15 |
| Issue: | 123010 |
| Source: | New Journal of Physics 15 (2013) 123010 (8pp). doi:10.1088/1367-2630/15/12/123010 |
| DOI: | https://doi.org/10.1088/1367-2630/15/12/123010 |
| Dewey Decimal Classification: | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
| Tag: | quantum dot |
| Release Date: | 2016/06/27 |
| Licence (German): |  CC BY: Creative-Commons-Lizenz: Namensnennung |