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Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing
Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-189795
- Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectanceOptical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k.p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.…
Autor(en): | M. Motyka, M. Dyksik, K. Ryczko, R. Weih, M. Dallner, S. Höfling, M. Kamp, G. Sęk, J. Misiewicz |
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URN: | urn:nbn:de:bvb:20-opus-189795 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | Applied Physics Letters |
Erscheinungsjahr: | 2016 |
Band / Jahrgang: | 108 |
Heft / Ausgabe: | 10 |
Aufsatznummer: | 101905 |
Originalveröffentlichung / Quelle: | Applied Physics Letters (2016) 108:10, 101905. https://doi.org/10.1063/1.4943193 |
DOI: | https://doi.org/10.1063/1.4943193 |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Freie Schlagwort(e): | GaAsSb; Type-II quantum well; interband cascade laser; modulation spectroscopy; semiconductors |
Datum der Freischaltung: | 14.01.2021 |
EU-Projektnummer / Contract (GA) number: | 636930 |
OpenAIRE: | OpenAIRE |
Lizenz (Deutsch): | CC BY: Creative-Commons-Lizenz: Namensnennung 4.0 International |