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Single-electron thermal devices coupled to a mesoscopic gate

Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-172982
  • We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron–electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and theWe theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron–electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and the possible gating with arbitrarily low energy cost. In the latter case, enhanced correlations of the state-selective tunneling transitions redistribute heat flows giving high rectification coefficients and the unexpected cooling of one conductor terminal by heating the other one. We propose quantum dot arrays as a possible way to achieve the extreme tunneling asymmetries required for the different operations.zeige mehrzeige weniger

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Metadaten
Autor(en): Rafael Sánchez, Holger Thierschmann, Laurens W. Molenkamp
URN:urn:nbn:de:bvb:20-opus-172982
Dokumentart:Artikel / Aufsatz in einer Zeitschrift
Institute der Universität:Fakultät für Physik und Astronomie / Physikalisches Institut
Sprache der Veröffentlichung:Englisch
Titel des übergeordneten Werkes / der Zeitschrift (Englisch):New Journal of Physics
Erscheinungsjahr:2017
Band / Jahrgang:19
Aufsatznummer:113040
Originalveröffentlichung / Quelle:New Journal of Physics (2017) 19:113040. https://iopscience.iop.org/article/10.1088/1367-2630/aa8b94
DOI:https://doi.org/10.1088/1367-2630/aa8b94
Allgemeine fachliche Zuordnung (DDC-Klassifikation):5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik
Freie Schlagwort(e):heat currents; physics; quantum dot; single-electron tunneling; thermal devices
Datum der Freischaltung:25.05.2021
EU-Projektnummer / Contract (GA) number:339306
OpenAIRE:OpenAIRE
Lizenz (Deutsch):License LogoCC BY: Creative-Commons-Lizenz: Namensnennung