Photoluminescence quenching mechanisms in type IIInAs/GaInSb QWs on InAs substrates
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- Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiativeOptical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid- and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.…
Autor(en): | M. Dyksik, M. Motyka, M. Kurka, K. Ryczo, M. Dallner, S. Höfling, M. Kamp, G. Sęk, J. Misiwicz |
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URN: | urn:nbn:de:bvb:20-opus-204672 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | Optical and Quantum Electronics |
Erscheinungsjahr: | 2016 |
Band / Jahrgang: | 48 |
Heft / Ausgabe: | 401 |
Originalveröffentlichung / Quelle: | Optical and Quantum Electronics (2016) 48:401. https://doi.org/10.1007/s11082-016-0667-y |
DOI: | https://doi.org/10.1007/s11082-016-0667-y |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Freie Schlagwort(e): | Fourier-transform spectroscopy; Interband cascade lasers; Localized states; MU-M; Mid-infrared photoluminescence; Quantum wells; Type II quantum wells |
Datum der Freischaltung: | 02.06.2020 |
Lizenz (Deutsch): | CC BY: Creative-Commons-Lizenz: Namensnennung 4.0 International |