Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots
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- In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence onIn this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. (C) 2014 Author(s).…
Autor(en): | T. Braun, C. Schneider, S. Maier, R. Igusa, S. Iwamoto, A. Forchel, S. Höfling, Y. Arakawa, M. Kamp |
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URN: | urn:nbn:de:bvb:20-opus-115448 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | AIP Advances |
ISSN: | 2158-3226 |
Erscheinungsjahr: | 2014 |
Band / Jahrgang: | 4 |
Heft / Ausgabe: | 9 |
Originalveröffentlichung / Quelle: | AIP Advances 4, 097128 (2014). DOI:10.1063/1.4896284 |
DOI: | https://doi.org/10.1063/1.4896284 |
Sonstige beteiligte Institutionen: | Wilhelm-Conrad-Röntgen-Forschungszentrum für komplexe Materialsysteme |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Freie Schlagwort(e): | GAAS |
Datum der Freischaltung: | 14.07.2015 |
Lizenz (Deutsch): | CC BY: Creative-Commons-Lizenz: Namensnennung |