The issue of 0D-like ground state isolation in GaAs- and InP-based coupled quantum dots-quantum well systems
Zitieren Sie bitte immer diese URN: urn:nbn:de:bvb:20-opus-262876
- The issue of quantum mechanical coupling between a semiconductor quantum dot and a quantum well is studied in two families of GaAs- and InP- based structures at cryogenic temperatures. It is shown that by tuning the quantum well parameters one can strongly disturb the 0D-character of the coupled system ground state, initially located in a dot. The out-coupling of either an electron or a hole state from the quantum dot confining potential is viewed by a significant elongation of the photoluminescence decay time constant. Band structureThe issue of quantum mechanical coupling between a semiconductor quantum dot and a quantum well is studied in two families of GaAs- and InP- based structures at cryogenic temperatures. It is shown that by tuning the quantum well parameters one can strongly disturb the 0D-character of the coupled system ground state, initially located in a dot. The out-coupling of either an electron or a hole state from the quantum dot confining potential is viewed by a significant elongation of the photoluminescence decay time constant. Band structure calculations show that in the GaAs-based coupled system at its ground state a hole remains isolated in the dot, whereas an electron gets delocalized towards the quantum well. The opposite picture is built for the ground state of a coupled system based on InP.…
Autor(en): | M. Syperek, J. Andrzejewski, W. Rudno-Rudziński, A. Maryński, G. Sȩk, J. Misiewicz, J. P. Reithmaier, A. Somers, S. Höfling |
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URN: | urn:nbn:de:bvb:20-opus-262876 |
Dokumentart: | Artikel / Aufsatz in einer Zeitschrift |
Institute der Universität: | Fakultät für Physik und Astronomie / Physikalisches Institut |
Sprache der Veröffentlichung: | Englisch |
Titel des übergeordneten Werkes / der Zeitschrift (Englisch): | Journal of Physics: Conference Series |
ISSN: | 1742-6588 |
ISSN: | 1742-6596 |
Erscheinungsjahr: | 2017 |
Band / Jahrgang: | 906 |
Heft / Ausgabe: | 1 |
Aufsatznummer: | 012019 |
Originalveröffentlichung / Quelle: | Journal of Physics: Conference Series 2017, 906:012019. DOI: 10.1088/1742-6596/906/1/012019 |
DOI: | https://doi.org/10.1088/1742-6596/906/1/012019 |
Allgemeine fachliche Zuordnung (DDC-Klassifikation): | 5 Naturwissenschaften und Mathematik / 53 Physik / 530 Physik |
Freie Schlagwort(e): | quantum mechanical coupling; quantum well; semiconductor quantum dot |
Datum der Freischaltung: | 08.12.2022 |
Lizenz (Deutsch): | CC BY: Creative-Commons-Lizenz: Namensnennung |